초록 ▼

A programmable read only memory array of the fusible link type employs a small part of a deposited metal film as a fuse. The film is covered by a protective glaze which seals the surface of the semiconductor chip to avoid deterioration of the transistors or other components. In order to minimize hea

A programmable read only memory array of the fusible link type employs a small part of a deposited metal film as a fuse. The film is covered by a protective glaze which seals the surface of the semiconductor chip to avoid deterioration of the transistors or other components. In order to minimize heat loss to the semiconductor substrate when programming, and to provide a cavity beneath the protective glaze, the metal film is raised above the surface at the position of the fusible link. This is accomplished by a segment of photoresist applied prior to metal deposition, then removed with photoresist stripper after the metal is patterned.

대표청구항 ▼

A method of making a semiconductor device including the steps of applying a coating of photoresist to define a plurality of small segments, depositing a thin film of conductive material on said face and over the small segments, patterning the film to leave elongated strips extending across the segme

A method of making a semiconductor device including the steps of applying a coating of photoresist to define a plurality of small segments, depositing a thin film of conductive material on said face and over the small segments, patterning the film to leave elongated strips extending across the segments of photoresist and exposing parts of the segments, thereafter removing the segments of photoresist to leave raised portions in the elongated strips and selectively applying excess current to some of the elongated strips to fuse the raised portions.