|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||307/310 ; 307/254 ; 307/249 ; 307/317A|
|발명자 / 주소|
|출원인 / 주소|
|인용정보||피인용 횟수 : 7 인용 특허 : 1|
Temperature compensation is provided in a switching circuit for the channel resistance of a MOS/FET transistor through which a voltage source is applied to an output terminal. The gate-source voltage of the transistor is varied directly with temperature changes to hold the channel resistance substantially constant within the switching circuit. In a particular embodiment, at least one output level of a pulse amplifier is controlled through the temperature compensated switching circuit of the invention. The other output level of this pulse amplifier is app...
A switching circuit of the type wherein a voltage source is applied through a MOS/FET transistor to the output terminal thereof, a signal at the input terminal thereof controls the conductivity of said MOS/FET transistor, and compensation means is provided for varying the gate-source voltage of said MOS/FET transistor to hold the drain-source channel resistance thereof substantially constant as temperature changes, which compensation means comprises: a bipolar transistor having base, emitter and collector electrodes, and having a base-emitter junction; m...