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Two-step preplate system for polymeric surfaces 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-003/04
  • C23C-003/02
출원번호 US-0964306 (1978-11-28)
발명자 / 주소
  • DuRose Arthur H. (Pinellas Park FL)
출원인 / 주소
  • The Harshaw Chemical Company (Cleveland OH 02)
인용정보 피인용 횟수 : 164  인용 특허 : 7

초록

Non-metallic surfaces are prepared to receive an electroless metal deposit of copper, gold or nickel using a two-step adsorption procedure to sensitize the surface. The surface is first immersed in a bath containing copper in solution or suspension to adsorb the copper on the surface, followed by co

대표청구항

A process of preparing a non-metallic surface for the electroless deposition of a metallic layer of copper, nickel or gold comprising the steps of (a) contacting the surface with a copper compound available from a bath selected from the group consisting of (1) a solution of a simple cupric compound;

이 특허에 인용된 특허 (7)

  1. Donovan Lawrence P. (Temple City CA) Maguire Eileen (Pasadena CA) Kadison Leon A. (Pasadena CA), Aqueous suspensions for surface activation of nonconductors for electroless plating.
  2. Feldstein Nathan (Princeton NJ), Catalytic developer.
  3. Januschkowetz Herbert (Neukatzwang DT) Laub Hans (Nurnberg DT), Method for metallizing thermosetting plastics.
  4. Polichette Joseph (South Farmingdale NY) Leech Edward J. (Oyster Bay NY), Method for the production of radiant energy imaged printed circuit boards.
  5. Doty Warren R. (Royal Oak MI) Kinney Timothy J. (Berkley MI), Method for treating plastic substrates prior to plating.
  6. Polichette Joseph (South Farmingdale NY) Leech Edward J. (Oyster Bay NY), Process for the formation of real images and products produced thereby.
  7. Nuzzi Francis J. (Lynbrook NY), Sensitized substrates for chemical metallization.

이 특허를 인용한 특허 (164)

  1. Bateman, Stuart Arthur; Cardonna, Francisco; Simons, Ranya; Wu, Dong Yang; Berry, Douglas H.; Kirchner, James F.; Kobak, Seana B.; Seebergh, Jill E., Activation method.
  2. Bateman, Stuart Arthur; Simons, Ranya; Wu, Dong Yang; McMahon, Patrick James; Bilyk, Alexander; Berry, Douglas H.; Kobak, Seana B.; Kirchner, James F.; Straus, Lori Clarice; Johnson, Mark Paul, Activation method using modifying agent.
  3. Sinha, Nishant, Activation of oxides for electroless plating.
  4. Nemani, Srinivas D.; Koshizawa, Takehito, Air gap process.
  5. Purayath, Vinod R.; Ingle, Nitin K., Air gaps between copper lines.
  6. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  7. Lee, Wei Ti; Hassan, Mohd Fadzli Anwar; Guo, Ted; Yu, Sang-Ho, Aluminum contact integration on cobalt silicide junction.
  8. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum oxide selective etch.
  9. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.
  10. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.
  11. Lubomirsky,Dmitry; Shanmugasundram,Arulkumar; Pancham,Ian A.; Lopatin,Sergey, Apparatus for electroless deposition.
  12. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Ellwanger, Russell; Pancham, Ian A.; Cheboli, Ramakrishna; Weidman, Timothy W., Apparatus for electroless deposition of metals onto semiconductor substrates.
  13. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Pancham, Ian A., Apparatus for electroless deposition of metals onto semiconductor substrates.
  14. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  15. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  16. Lubomirsky, Dmitry, Chamber with flow-through source.
  17. Lubomirsky, Dmitry, Chamber with flow-through source.
  18. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  19. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  20. Patch Keith D. (Lexington MA) Morgan Dean T. (Sudbury MA), Chemical enhancement of surface deposition.
  21. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.
  22. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.
  23. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.
  24. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  25. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  26. Weidman, Timothy W.; Wijekoon, Kapila P.; Zhu, Zhize; Gelatos, Avgerinos V. (Jerry); Khandelwal, Amit; Shanmugasundram, Arulkumar; Yang, Michael X.; Mei, Fang; Moghadam, Farhad K., Contact metallization scheme using a barrier layer over a silicide layer.
  27. Hoinkis, Mark; Yan, Chun; Miyazoe, Hiroyuki; Joseph, Eric, Copper residue chamber clean.
  28. Zhu, Lina; Kang, Sean S.; Nemani, Srinivas D.; Kao, Chia-Ling, Delicate dry clean.
  29. Patch Keith D. ; Morgan Dean T., Detecting low levels of radionuclides in fluids.
  30. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  31. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  32. Purayath, Vinod R.; Wang, Anchuan; Ingle, Nitin K., Dopant etch selectivity control.
  33. Zhang, Jingchun; Ingle, Nitin K.; Wang, Anchuan, Dry etch process.
  34. Kim, Sang Hyuk; Yang, Dongqing; Lee, Young S.; Jung, Weon Young; Kim, Sang-jin; Hsu, Ching-Mei; Wang, Anchuan; Ingle, Nitin K., Dry-etch for selective oxidation removal.
  35. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  36. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  37. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Wang, Yunyu; Lee, Young, Dry-etch for silicon-and-carbon-containing films.
  38. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  39. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  40. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.
  41. Miller Walter J. (Philadelphia PA), EMI/RFI vapor deposited composite shielding panel.
  42. Marikar Yusuf M. F. (Scotch Plains NJ) Besso Michael M. (West Orange NJ), Electrically conductive thermally stabilized acrylic fibrous material and process for preparing same.
  43. Stevens,Joseph J.; Lubomirsky,Dmitry; Pancham,Ian; Olgado,Donald J. K.; Grunes,Howard E.; Mok,Yeuk Fai Edwin, Electroless deposition apparatus.
  44. Padhi, Deenesh; Yahalom, Joseph; Ramanathan, Sivakami; McGuirk, Chris R.; Gandikota, Srinivas; Dixit, Girish, Electroless deposition method.
  45. Padhi, Deenesh; Yahalom, Joseph; Ramanathan, Sivakami; McGuirk, Chris R.; Gandikota, Srinivas; Dixit, Girish, Electroless deposition method.
  46. Gandikota, Srinivas; McGuirk, Chris R.; Padhi, Deenesh; Malik, Muhammad Atif; Ramanathan, Sivakami; Dixit, Girish A.; Cheung, Robin, Electroless deposition method over sub-micron apertures.
  47. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  48. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  49. Ingle, Nitin K.; Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Enhanced etching processes using remote plasma sources.
  50. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.
  51. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Even tungsten etch for high aspect ratio trenches.
  52. Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.
  53. Pandit, Mandar; Wang, Xikun; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Fluorine-based hardmask removal.
  54. Park, Seung; Wang, Xikun; Liu, Jie; Wang, Anchuan; Kim, Sang-jin, Gas-phase tungsten etch.
  55. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.
  56. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  57. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.
  58. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.
  59. Chen, Zhijun; Li, Zihui; Ingle, Nitin K.; Wang, Anchuan; Venkataraman, Shankar, Highly selective doped oxide removal method.
  60. Chen, Xinglong; Lubomirsky, Dmitry; Venkataraman, Shankar, Insulated semiconductor faceplate designs.
  61. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  62. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  63. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Integrated oxide and nitride recess for better channel contact in 3D architectures.
  64. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated oxide recess and floating gate fin trimming.
  65. Sinha,Nishant, Intermediate semiconductor device having activated oxide-based layer for electroless plating.
  66. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  67. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  68. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.
  69. Hsu, Ching-Mei; Ingle, Nitin K.; Hamana, Hiroshi; Wang, Anchuan, Low temperature gas-phase carbon removal.
  70. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Metal air gap.
  71. Lopatin,Sergey; Shanmugasundram,Arulkumar; Lubomirsky,Dmitry; Pancham,Ian A., Method for forming CoWRe alloys by electroless deposition.
  72. Kao, Chien-Teh; Chou, Jing-Pei (Connie); Lai, Chiukin (Steven); Umotoy, Sal; Huston, Joel M.; Trinh, Son; Chang, Mei; Yuan, Xiaoxiong (John); Chang, Yu; Lu, Xinliang; Wang, Wei W.; Phan, See-Eng, Method for removing oxides.
  73. Yoshizawa Izuru,JPX ; Takahashi Hiroaki,JPX ; Kawahara Tomoyuki,JPX, Method of coating a copper film on a ceramic substrate.
  74. Ko, Jungmin, Method of fin patterning.
  75. Miller, Walter J., Method of manufacture of EMI/RFI vapor deposited composite shielding panel.
  76. Tomibe Shinji (Kyoto JPX) Gomibuchi Reizo (Uji JPX) Takahashi Kiyofumi (Yawata JPX), Method of producing an electrically conductive polymeric material with adsorbed metal sulfide and product.
  77. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  78. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
  79. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of metal and metal-oxide films.
  80. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  81. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of sin films.
  82. Hong, Sukwon; Hamana, Hiroshi; Liang, Jingmei, Methods of reducing substrate dislocation during gapfill processing.
  83. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  84. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  85. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K.; Anthis, Jeffrey W.; Schmiege, Benjamin, Oxide and metal removal.
  86. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  87. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  88. Xu, Lin; Chen, Zhijun; Wang, Anchuan; Nguyen, Son T., Oxide etch selectivity systems and methods.
  89. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  90. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  91. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  92. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.
  93. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Polarity control for remote plasma.
  94. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  95. Ramanathan, Sivakami; Padhi, Deenesh; Gandikota, Srinivas; Dixit, Girish A., Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application.
  96. Yuan Benzhen,JPX ; Asai Motoo,JPX, Pretreating solution for electroless plating, electroless plating bath and electroless plating process.
  97. Yuan Benzhen,JPX ; Asai Motoo,JPX, Pretreating solution for electroless plating, electroless plating bath and electroless plating process.
  98. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  99. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  100. Lubomirsky, Dmitry; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Kovarsky, Nicolay Y.; Wijekoon, Kapila, Process for electroless copper deposition.
  101. Hoover, Merwin F.; Salamone, Ann B.; Vandebult, Jan, Process for producing composite product having patterned metal layer.
  102. Hoover Merwin F. (Topsfield MA) Salamone Ann B. (Marblehead MA) Vandebult Jan (Topsfield MA), Process for producing product having patterned metal layer.
  103. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  104. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  105. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  106. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  107. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  108. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  109. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  110. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  111. Naik, Mehul; Ma, Paul F.; Nemani, Srinivas D., Protective via cap for improved interconnect performance.
  112. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry, Radial waveguide systems and methods for post-match control of microwaves.
  113. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  114. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  115. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  116. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  117. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  118. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Remotely-excited fluorine and water vapor etch.
  119. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  120. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  121. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
  122. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  123. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  124. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  125. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  126. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  127. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  128. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  129. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  130. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  131. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  132. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  133. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  134. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  135. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
  136. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
  137. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  138. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  139. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  140. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  141. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  142. Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.
  143. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  144. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
  145. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  146. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  147. Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.
  148. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  149. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
  150. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.
  151. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  152. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  153. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  154. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
  155. Lopatin,Sergey D.; Shanmugasundrum,Arulkumar; Shacham Diamand,Yosef, Silver under-layers for electroless cobalt alloys.
  156. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  157. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.
  158. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  159. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.
  160. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.
  161. Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.
  162. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  163. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  164. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
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