초록 ▼

Low strain heteroepitaxy of (111) silicon on (111) lithium aluminum between the reconstructed 7×7 surface of (111) silicon and a 6×6 array of aluminum atoms on the surface of the (111) lithium aluminum. The 7×7 reconstructed (111) silicon surface contains 36 silicon atoms and 13 vacancies for every

Low strain heteroepitaxy of (111) silicon on (111) lithium aluminum between the reconstructed 7×7 surface of (111) silicon and a 6×6 array of aluminum atoms on the surface of the (111) lithium aluminum. The 7×7 reconstructed (111) silicon surface contains 36 silicon atoms and 13 vacancies for every 49 surface sites. The 36 silicon atoms on an area averaged basis match the 36 aluminum atoms in the 6×6 aluminum diamond structure (zero vacancies) present at the (111) surface of lithium aluminum to within about 1%.

대표청구항 ▼

A method for producing a layer of crystalline silicon having a (111) orientation comprising: providing a substrate of crystalline lithium aluminum, said substrate having essentially a (111) orientation and having an exposed aluminum surface; gradually applying silicon atoms thereto from the vapor st

A method for producing a layer of crystalline silicon having a (111) orientation comprising: providing a substrate of crystalline lithium aluminum, said substrate having essentially a (111) orientation and having an exposed aluminum surface; gradually applying silicon atoms thereto from the vapor state at a rate which allows said silicon atoms to arrange themselves for oriented overgrowth on said substrate; and recovering a product comprising a layer of crystalline silicon having a (111) orientation upon a (111) lithium aluminum substrate, said layer of crystalline silicon having a reconstructed 7×7 surface configuration at the silicon-aluminum interface which has epitaxial relationship with a 6×6 aluminum surface structure on the (111) lithium aluminum.