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A semiconductor photoelectric conversion device employing a semiconductor layer which has at least one inter-semiconductor heterojunction. The semiconductor layer is composed of at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconduc

A semiconductor photoelectric conversion device employing a semiconductor layer which has at least one inter-semiconductor heterojunction. The semiconductor layer is composed of at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap and a third non-single-crystal semiconductor region serving as the heterojunction formed to extend between the first and second semiconductor regions and having an energy gap continuously changing from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region. The semiconductor layer is doped with a recombination center neutralizer and a conductive material. The non-single-crystal semiconductor layer doped with the conductive material is formed on a substrate by a low pressure chemical vapor deposition or glow discharge method. Then, the non-single-crystal semiconductor layer is exposed to a hydrogen gas or a mixture thereof with a small amount of halogen so that the non-single-crystal semiconductor layer is doped with hydrogen or halogen as a recombination center neutralizer, whereby to obtain the semiconductor photoelectric conversion device.

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A semiconductor photoelectric conversion device employing a semiconductor layer having at least one inter-semiconductor heterojunction, which comprises at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second

A semiconductor photoelectric conversion device employing a semiconductor layer having at least one inter-semiconductor heterojunction, which comprises at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap, and a third non-single-crystal semiconductor region defined between the first and second semiconductor regions to serve as a heterojunction, and wherein the third semiconductor region has an energy gap which successively changes from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and wherein the semiconductor layer has doped therein a recombination center neutralizer and a conductive material.