초록 ▼

A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure be

A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.

대표청구항 ▼

A composite consisting essentially of a polycrystalline diamond body integrally bonded to a substrate of polycrystalline silicon carbide, said polycrystalline diamond body consisting essentially of a mass of diamond crystals adherently bonded together by a bonding medium consisting essentially of si

A composite consisting essentially of a polycrystalline diamond body integrally bonded to a substrate of polycrystalline silicon carbide, said polycrystalline diamond body consisting essentially of a mass of diamond crystals adherently bonded together by a bonding medium consisting essentially of silicon carbide and a carbide and/or silicide of a metal component which forms a silicide with silicon and which forms a eutectiferous alloy with silicon, said metal component of said metal silicide being selected from the group consisting of cobalt, chromium, iron, hafnium, manganese, molybdenum, nickel, palladium, platinum, rhenium, rhodium, ruthenium, tantalum, thorium, titanium, uranium, vanadium, tungsten, yttrium, zirconium, and alloys thereof, said metal component of said metal carbide being selected from the group consisting of chromium, hafnium, titanium, zirconium, tantalum, vanadium, tungsten, molybdenum, and alloys thereof, said diamond crystals ranging in size from about 1 micron to about 1000 microns, the volume of said diamond crystals ranging from at least about 70% by volume up to about but less than 90% by volume of said body, said bonding medium being present in an amount ranging up to about 30% by volume of said body, said bonding medium being distributed at least substantially uniformly throughout said body, the portion of said bonding medium in contact with the surfaces of said diamond crystals being at least in a major amount silicon carbide, said diamond body being at least substantially porefree, said substrate consisting essentially of a hot-pressed or sintered polycrystalline silicon carbide body wherein the silicon carbide grains are bonded directly to each other ranging in density from about 85% to about 100% of the theoretical density of silicon carbide and containing silicon carbide in an amount of at least 90% by weight of said substrate and being free of constituents which have a significant deleteriouseffect on the mechanical properties of said composite, said polycrystalline diamond body forming an interface with said silicon carbide substrate wherein said bonding medium extends from said polycrystalline diamond body into contact with said silicon carbide substrate at least substantially filling any pores throughout said interface so that said interface is at least substantially pore-free.