초록 ▼

An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plas

An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plasma reaction chamber with a condenser lens attached thereto and the other terminal located outside the plasma reaction chamber at a distanced position free from the influence of the high frequency electric field inherent to plasma generation which otherwise interferes with the photoelectric recording by the photocell connected to the outer terminal of the optical fiberscope.

대표청구항 ▼

Plasma treatment apparatus for treatment of silicon semiconductor wafers and the like comprising a plasma reaction chamber having an inlet for plasma forming gas and an outlet for connection to a vacuum source, means for supporting a semiconductor wafer during plasma treatment and comprising, a wafe

Plasma treatment apparatus for treatment of silicon semiconductor wafers and the like comprising a plasma reaction chamber having an inlet for plasma forming gas and an outlet for connection to a vacuum source, means for supporting a semiconductor wafer during plasma treatment and comprising, a wafer table located within said chamber and being movable between upper and lower positions relative to said chamber. high frequency electrode means associated with said chamber and connected to a high frequency generator for creating plasma within said chamber, an optical fiberscope having first and second terminals, said first terminal penetrating a wall of the chamber and said second terminal being connected to a photoelectric transducer means for detecting light intensity, said second terminal and photoelectric transducer means being positioned at a location remote from said high frequency electrode means to avoid any significant electrical interference therefrom on said photoelectric transducer means, and a condenser lens located within said chamber and being connected to said first terminal of said optical fiberscope for collecting light emitted from the plasma within said chamber.