초록 ▼

A method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced in the practice of this method. In the method, a wafer or doped silicon or other semiconductor material has portions of the semiconductor material removed from spaced areas to for

A method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced in the practice of this method. In the method, a wafer or doped silicon or other semiconductor material has portions of the semiconductor material removed from spaced areas to form a plurality of recesses in the surface of the semiconductor material. The material is doped to enhance its electrical conductivity. A dielectric material has one of its surfaces coated with spaces areas of electrically conductive material. The semiconductor material is attached to the coated surface of the dielectric material such that the surface recesses in the semiconductor material are in alignment with the conductive areas on the dielectric material. This produces a plurality of electrical capacitors suitable for use as pressure transducers. The capacitance of these transducers is varied as a function of changes in one or more fluid pressures acting on the plates of each of the capacitors, one of these plates being the doped semiconductor material and the other being a conductive area on the dielectric material. Fluid pressure between the plates may be established during manufacture. The intermediate article of manufacture produced by this process may then be cut into a plurality of separate pressure transducers.

대표청구항 ▼

A method for manufacturing variable capacitance pressure transducers, comprising the steps of: (a) from spaced areas on a surface of a wafer of semiconductor material, removing a portion of the semiconductor material in the spaced areas to form a plurality of recesses in the surface of the semicondu

A method for manufacturing variable capacitance pressure transducers, comprising the steps of: (a) from spaced areas on a surface of a wafer of semiconductor material, removing a portion of the semiconductor material in the spaced areas to form a plurality of recesses in the surface of the semiconductor material; (b) doping the semiconductor material, at least in the regions in the recesses, to enhance its electrical conductivity on such regions; (c) on a surface of a dielectric material, forming spaced areas of electrically conductive material; and (d) attaching the surface of the semiconductor material to the surface of the dielectric material such that surface recesses of the semiconductor material are in adjacent, spaced and substantially parallel alignment with areas of electrically conductive material on the dielectric material, thereby, to form a plurality of electrical capacitors, each of the capacitors having doped semiconductor material as one plate thereof spaced from another plate thereof comprising at least one of the electrically conductive areas, and the capacitance of the capacitors being variable as a function of changes in one or more fluid pressures acting on the plates of the electrical capacitors.