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A method of bonding a cover glass to a semiconductor substrate having conductors thereon. The cover glass and the semiconductor substrate are placed in a relatively high voltage field and heated to induce ion drift in the glass and improved conductivity in the substrate. Additional localized heating

A method of bonding a cover glass to a semiconductor substrate having conductors thereon. The cover glass and the semiconductor substrate are placed in a relatively high voltage field and heated to induce ion drift in the glass and improved conductivity in the substrate. Additional localized heating softens the cover glass in the vicinity of the conductors permitting the cover glass to flow around the conductors and to be drawn into contact and bonded with the substrate.

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A method of integrally bonding a cover glass to a surface of a semicondutor cell having conductors thereon, comprising the steps of: providing a semiconductor cell and a cover glass having a desired ratio of energy absorptions at a certain wavelength; juxtaposing the cover glass and the semiconducto

A method of integrally bonding a cover glass to a surface of a semicondutor cell having conductors thereon, comprising the steps of: providing a semiconductor cell and a cover glass having a desired ratio of energy absorptions at a certain wavelength; juxtaposing the cover glass and the semiconductor cell, the conductors spacing apart the cover glass and the semiconductor cell; applying a predetermined electrostatically-bonding high voltage between the outer surfaces of the juxtaposed cover glass and the semiconductor cell; pre-heating the juxtaposed cover glass and the semiconductor cell to a first temperature sufficient to promote ion drift in the cover glass and to establish an electrostatic field between the cover glass and the cell; and irradiating the juxtaposed cover glass and the semiconductor cell with a pulsed beam of electromagnetic energy at the certain wavelength on a path substantially normal to said cover glass to heat the juxtaposed cover glass and the silicon cell to a second temperature higher than the first temperature except in those regions above the conductors which are heated to a third temperature higher than the second temperature due to reflection back into said cover glass of the pulsed beam by the conductors, the third temperature sufficient to enable the cover glass to soften and flow around the conductors so that the cover glass is electrostatically drawn toward the adjacent surface of the semicnductor cell to bond the surfaces thereof along substantially all of the interface therebetween.