초록 ▼

The invention is a structure for improving the cooling characteristics of a silicon semiconductor device immersed in a fluid coolant. The cooling improvement is achieved by enhancing the nucleate boiling characteristics of the silicon device by initially forming lattice defects on the backside surfa

The invention is a structure for improving the cooling characteristics of a silicon semiconductor device immersed in a fluid coolant. The cooling improvement is achieved by enhancing the nucleate boiling characteristics of the silicon device by initially forming lattice defects on the backside surface of the device by sandblasting and subsequently etching the damaged surface to remove the lattice defects and thereby produce an intricate surface morphology which provides nucleate boiling sites.

대표청구항 ▼

In a silicon integrated circuit device adapted for immersion in a fluorocarbon liquid coolant in a semiconductor package, the improvement comprising an intricate surface morphology on the back side surface of said device that in use provides enhanced nucleate boiling characteristics, said surface ch

In a silicon integrated circuit device adapted for immersion in a fluorocarbon liquid coolant in a semiconductor package, the improvement comprising an intricate surface morphology on the back side surface of said device that in use provides enhanced nucleate boiling characteristics, said surface characterized as porous and sponge-like, said surface embodying very small interconnected irregular shaped cavities that have a depth greater than the diameter and are of a shape and size to preclude wetting of the interior surfaces by said fluorocarbon liquid coolant, said surface morphology formed in monocrystalline silicon that is substantially free of crystalline lattice damage.