Computer controlled system for processing semiconductor wafers
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-015/00
H01L-021/306
출원번호
US-0151169
(1980-05-19)
발명자
/ 주소
Davies John T. (El Sobrante CA) Reichelderfer Richard F. (Castro Valley CA)
출원인 / 주소
Branson International Plasma Corporation (Hayward CA 02)
인용정보
피인용 횟수 :
145인용 특허 :
6
초록▼
Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each
Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.
대표청구항▼
In a wafer processing system: means defining a reaction chamber having inlet and outlet ports, load locks operable to provide access to the chamber through the ports while maintaining the chamber in a closed condition, conveyor means for carrying a wafer into and out of the chamber through the load
In a wafer processing system: means defining a reaction chamber having inlet and outlet ports, load locks operable to provide access to the chamber through the ports while maintaining the chamber in a closed condition, conveyor means for carrying a wafer into and out of the chamber through the load locks, a first electrode mounted in a stationary position within the chamber, a second electrode mounted on a swinging arm for movement between an upright receiving position adjacent to the conveyor means and an inverted wafer processing position above the first electrode, means for securing the wafer to the second electrode for movement therewith, flow control means for controlling the admission of gas into the chamber, means for energizing the electrodes to ionize the gas to form a plasma for processing the wafer, and exhaust pump for evacuating the chamber, and computer means for controlling operation of the conveyor means, the load locks, the swinging arm the flow control means, the exhaust pump and energization of the electrodes to process the wafer in a predetermined manner. In a process for processing a wafer having a generally planar surface in a system comprising a reaction chamber, a conveyor for carrying the wafer into and out of the chamber, a first electrode mounted in a stationary position within the chamber, and a second electrode mounted on a swinging arm for movement between a wafer receiving position and a wafer processing position, the steps of: transporting the wafer into the chamber on the conveyor transferring the wafer from the conveyor to the second electrode, securing the wafer to the second electrode, swinging the arm about an axis parallel to the wafer surface to move the second electrode and the wafer from the receiving position to the processing position, introducing reagent gas into the chamber, and energizing the electrodes to ionize the gas and form a plasma for processing the wafer. In a wafer processing system: means defining a reaction chamber, a first electrode mounted in a predetermined position within the chamber, a second electrode mounted on a swinging arm for movement between a wafer receiving position away from the first electrode and a wafer processing position adjacent to the first electrode, conveyor means comprising a walking beam having relatively moveable elongated rails for carrying the wafer to and from the reaction chamber, a plurality of fingers operatively connected to the rails and extending through openings in the second electrode for moving the wafer onto and off of the second electrode when said electrode is in the wafer receiving position, means for securing the wafer to the second electrode for movement with said electrode between the wafer receiving position and the wafer processing position, means for introducing a reagent gas into the chamber, and means for energizing the electrodes to ionize the gas and form a plasma for processing the wafer between the electrodes when the second electrode is in the processing position above the first electrode.
연구과제 타임라인
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이 특허에 인용된 특허 (6)
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