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Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of

Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove.

대표청구항 ▼

An apparatus for etching integrated circuits comprising: a generator of a plasma of a gaseous component under low pressure; means for controlling the electron density of the plasma formed by said plasma generator; a leak tight chamber having a metallic wall and an inner metallic electrode plate for

An apparatus for etching integrated circuits comprising: a generator of a plasma of a gaseous component under low pressure; means for controlling the electron density of the plasma formed by said plasma generator; a leak tight chamber having a metallic wall and an inner metallic electrode plate for supporting integrated circuits to be etched, said plate being insulated from said wall; a high frequency alternating signal generator; means for applying said high frequency alternating signal between said electrode and said wall; means for measuring the value of the current of said alternating signal; and communication means between the plasma generator and the leak tight chamber.