Tokyo Ohka Kogyo Kabushiki Kaisha (Kanagawa JPX 03)
인용정보
피인용 횟수 :
88인용 특허 :
3
초록▼
An apparatus for the treatment of semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a first wafer carrying means for a wafer to be treated, a reaction chamber, a second wafer carrying means for a treated wafer, and a control means for driving respective elements thereof i
An apparatus for the treatment of semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a first wafer carrying means for a wafer to be treated, a reaction chamber, a second wafer carrying means for a treated wafer, and a control means for driving respective elements thereof in linkage motion. The first wafer carrying means has a first arm type wafer carrying means, which comprises a pair of guide rails, a pair of sliders mounted on the guide rails, respectively, and a pair of first arms for carrying the wafer to be treated. The reaction chamber is provided with a pair of slits for taking the wafer into and out of the reaction chamber, a pair of open-close type vacuum sealing devices mounted on the slits, respectively. Similarly, the second wafer carrying means has a second arm type wafer carrying means. The first and second wafer carrying means are preferably placed in a preliminary vacuum chamber, whereby a high vacuum in the reaction chamber can readily be obtained to be suitable for use in an etching device for aluminum wiring, and the like.
대표청구항▼
An apparatus for the treatment of semiconductor wafers by plasma reaction, which apparatus comprises a first wafer carrying means for a wafer to be treated which comprises a first conveyer for carrying the wafer to be treated, a second conveyer for carrying the wafer to be treated and disposed adjac
An apparatus for the treatment of semiconductor wafers by plasma reaction, which apparatus comprises a first wafer carrying means for a wafer to be treated which comprises a first conveyer for carrying the wafer to be treated, a second conveyer for carrying the wafer to be treated and disposed adjacent to said first conveyer, and a first arm type wafer carrying means, said first arm type wafer carrying means essentially consisting of a pair of guide rails, a pair of sliders slidably mounted on said guide rails respectively in the horizontal direction, and a pair of first arms for carrying the wafer to be treated, said first arms extending horizontally along said second conveyer and being shaped to be a pair of parallel rods spaced at a certain distance to each other with a certain length to be movable horizontally with said sliders; a reaction chamber provided with a pair of slits for taking the wafer to be treated into said reaction chamber or for taking a treated wafer out of said reaction chamber therethrough, respectively, a pair of vacuum sealing devices mounted on said slits and incorporating therein a pair of gate valve type shutters, respectively, a first electrode, a wafer table serving as a second electrode, faced to said first electrode and insulated from the surrounding environment, a sub-table which is fittable vacuum-tightly in the center of said wafer table along with a shaft integral therewith and is vertically movable by an elevator cylinder, a plasma gas nozzle, and a vacuum line; a second wafer carrying means for a treated wafer which comprises a second arm type wafer carrying means essentially consisting of a pair of guide rails, a pair of sliders slidably mounted on said guide rails respectively in the horizontal direction, and a pair of second arms for carrying the treated wafer, said second arms extending horizontally along a third conveyer for carrying the treated wafer and being shaped to be a pair of parallel rods spaced at a certain distance to each other with a certain length to be movable horizontally with said sliders; a third conveyer for carrying the treated wafer, and a fourth conveyer for carrying the treated wafer and disposed adjacent to said third conveyer; and a control means for driving said first wafer carrying means, said reaction chamber, and said second wafer carrying means in linkage motion.
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이 특허에 인용된 특허 (3)
Uehara Akira (Yokohama JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for the treatment of a wafer by plasma reaction.
Davis Cecil J. (Greenville TX) Spencer John E. (Plano TX) Johnson Randall E. (Carrollton TX) Jucha Rhett B. (Celeste TX) Brown Frederick W. (Tarrant TX) Kohan Stanford P. (Garland TX), Automated single slice cassette load lock plasma reactor.
Davis Cecil J. (Greenville TX) Spencer John E. (Plano TX) Hockersmith Dan T. (Garland TX) Hildenbrand Randall C. (Richardson TX) Brown Frederick W. (Colleyville TX) Kohan Stanford P. (Garland TX), Automated single slice powered load lock plasma reactor.
Provence John D. (Mesquite TX) Brown Frederick W. (Colleyville TX) Jones John I. (Plano TX), Dual detector system for determining endpoint of plasma etch process.
Condrashoff, Robert S.; Fazio, James P.; Hoffman, David E.; Tyler, James S., Material handling system and method for a multi-workpiece plasma treatment system.
Condrashoff, Robert Sergel; Fazio, James Patrick; Hoffman, David Eugene; Tyler, James Scott, Material handling system and methods for a multichamber plasma treatment system.
Spencer John E. (Plano TX) Johnson Randall E. (Carrollton TX) Hockersmith Dan T. (Garland TX) Hildenbrand Randall C. (Richardson TX) Jones John I. (Plano TX) Jaspersen William S. (Dallas TX), Powered load lock electrode/substrate assembly including robot arm, optimized for plasma process uniformity and rate.
Babu Suryadevara V. (One Carol Ct. Potsdam NY 13676) Lu Neng-hsing (1206 Park Manor Blvd. Endwell NY 13760) Nilsen Carl-Otto (1800 King Street Vestal NY 13850), Side source center sink plasma reactor.
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