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A thin film semiconductor gas sensor including a metal oxide semiconductor sensor layer whose electrical resistance changes in dependence upon the nature and concentration of a gas being detected and having a heating element integrated therewith is improved by forming the sensor from a semiconductor

A thin film semiconductor gas sensor including a metal oxide semiconductor sensor layer whose electrical resistance changes in dependence upon the nature and concentration of a gas being detected and having a heating element integrated therewith is improved by forming the sensor from a semiconductor body having a shell zone located relatively close to an outer surface of such body and being doped to the point of degeneration, with two spaced apart metal contact strips being positioned on such doped shell zone for connection with a current source to heat the sensor.

대표청구항 ▼

In a thin film semiconductor gas sensor including a metal oxide semiconductor sensor layer wherein the electrical resistance of the metal oxide semiconductor layer changes in dependence upon the nature and concentration of a gas being detected, said sensor having a heating element required for its f

In a thin film semiconductor gas sensor including a metal oxide semiconductor sensor layer wherein the electrical resistance of the metal oxide semiconductor layer changes in dependence upon the nature and concentration of a gas being detected, said sensor having a heating element required for its function integrated therewith; the improvement comprising wherein: said sensor comprises a semiconductor body having a shell zone located relatively close to an outer surface of such body, said zone being highly doped to the point of degeneration and two metal contact strips positioned on said zone and apart from one another for a heating connection to said sensor.