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Method for removing photoresist layer from substrate by ozone treatment 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B44C-001/22
  • C03C-015/00
  • C23F-001/00
  • H01L-021/306
출원번호 US-0601861 (1975-08-04)
발명자 / 주소
  • Shortes Samuel R. (Lewisville TX) Penn Thomas C. (Richardson TX)
출원인 / 주소
  • Texas Instruments Incorporated (Dallas TX 02)
인용정보 피인용 횟수 : 285  인용 특허 : 0

초록 ▼

Method and apparatus for removing a photoresist layer from a substrate surface of different material, such as a semiconductor slice, in the fabrication of an electronic structure, involving exposure of the photoresist layer to an ozone-containing gaseous atmosphere in a reaction zone of a reactor. T

대표청구항 ▼

In the fabrication of an electronic structure, a method for removing a layer of photoresist material from a substrate surface of different material, said method comprising: positioning the substrate on which the photoresist layer is disposed in a reaction zone of a reactor, introducing a gaseous atm

이 특허를 인용한 특허 (285)

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  142. Bok Edward (Badhoevedorp NLX), Method for coating substrates.
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  143. Qingyan Han ; Palani Sakthivel ; Ricky Ruffin ; Andre Cardoso, Method for detecting an endpoint for an oxygen free plasma process.
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  144. Kazama Toyoki (Yokosuka JPX) Shimatani Michiro (Fujisawa JPX), Method for generating substrates of electrophotographic photosensitive materials.
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  145. Sztein, Alexander; McLaurin, Melvin; Hsu, Po Shan; Raring, James W., Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material.
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  146. Sztein, Alexander; McLaurin, Melvin; Hsu, Po Shan; Raring, James W., Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material.
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  147. Sztein, Alexander; McLaurin, Melvin; Hsu, Po Shan; Raring, James W., Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material.
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  148. Molloy Simon John ; Vitkavage Daniel Joseph, Method for removing etching residues and contaminants.
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  149. Leon Vincent G. ; Honda Kenji ; Rothgery Eugene F., Method for removing photoresist and plasma etch residues.
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  150. Apschel Morris (Binghamton NY) Egitto Frank D. (Binghamton NY) Horwath Ronald S. (Endwell NY) Koren Gad (Yorktown Heights NY), Method for selectively etching the materials of a composite of two materials.
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  151. Chakraborty, Arpan; Tyagi, Anurag, Method for smoothing surface of a substrate containing gallium and nitrogen.
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  152. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
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  153. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
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  154. Elliott, David J.; Millman, Jr., Ronald P.; Tardif, Murray; Aiello, Krista, Method for surface cleaning.
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  155. Sakai Hiroyuki (Kumamoto JPX) Yoshioka Kazutoshi (Kumamoto JPX) Matsumura Kimiharu (Kumamoto JPX) Shigaki Keisuke (Kumamoto JPX) Amemiya Yutaka (Yamanashi JPX) Iimuro Shunichi (Yamanashi JPX) Yoshiok, Method of ashing layers, and apparatus for ashing layers.
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  156. Suzuki, Masaaki, Method of cleaning substrate.
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  157. Suzuki Masaaki,JPX, Method of cleaning substrate using ultraviolet radiation.
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  158. Biberger, Maximilian A.; Schilling, Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
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  159. Biberger,Maximilian A.; Schilling,Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
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  160. Pfister, Nicholas J.; Raring, James W.; Schmidt, Mathew, Method of fabricating optical devices using laser treatment.
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  161. Pfister, Nicholas J.; Raring, James W.; Schmidt, Mathew, Method of fabricating optical devices using laser treatment.
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  162. Felker, Andrew; Vickers, Nicholas A.; Aldaz, Rafael; Press, David; Pfister, Nicholas J.; Raring, James W.; Schmidt, Mathew C.; Thomson, Kenneth John, Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material.
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  163. Koguchi Toshio (Tokyo JPX) Kinoshita Haruo (Tokyo JPX), Method of forming resist pattern on substrate.
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  164. Nakanishi Toshiro (Kawasaki JPX) Sato Yasuhisa (Kawasaki JPX) Okuno Masaki (Kawasaki JPX), Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance.
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  165. Hillman,Joseph, Method of inhibiting copper corrosion during supercritical COcleaning.
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  166. Raring, James W.; McLaurin, Melvin; Rudy, Paul; Hsu, Po Shan; Sztein, Alexander, Method of manufacture for an ultraviolet laser diode.
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  167. Raring, James W.; McLaurin, Melvin; Rudy, Paul; Hsu, Po Shan; Sztein, Alexander, Method of manufacture for an ultraviolet laser diode.
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  168. Raring, James W.; McLaurin, Melvin; Rudy, Paul; Hsu, Po Shan; Sztein, Alexander, Method of manufacture for an ultraviolet laser diode.
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  169. Toma,Dorel Ioan; Schilling,Paul, Method of passivating of low dielectric materials in wafer processing.
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  170. Nishikawa Masaru (Tsutsujigaoka Haimu A-409 ; 13-3 ; Shibazaki 2-chome Chofu-shi ; Tokyo JPX) Nakagawa Kazumichi (Tokyo JPX) Yamaguchi Yohichi (Tokyo JPX), Method of processing an article in a supercritical atmosphere.
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  171. David K Carlson ; Paul B. Comita ; Norma B. Riley ; Dale R. Du Bois, Method of sealing an epitaxial silicon layer on a substrate.
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  172. Raring, James W.; Elsass, Christiane Poblenz, Method of strain engineering and related optical device using a gallium and nitrogen containing active region.
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  173. Raring, James W.; Elsass, Christiane Poblenz, Method of strain engineering and related optical device using a gallium and nitrogen containing active region.
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  174. Raring, James W.; Poblenz, Christiane, Method of strain engineering and related optical device using a gallium and nitrogen containing active region.
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  175. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
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  176. Schilling,Paul, Method of treating a composite spin-on glass/anti-reflective material prior to cleaning.
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  177. Schilling,Paul, Method of treatment of porous dielectric films to reduce damage during cleaning.
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  178. Masaaki Suzuki JP, Method of washing substrate with UV radiation and ultrasonic cleaning.
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  179. Yen Ming-Shuo,TWX ; Chen Horng-Wen,TWX ; Chen Pei Hung,TWX, Method to reduce contact resistance by means of in-situ ICP.
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  180. Raring, James W., Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices.
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  181. Raring, James W., Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices.
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  182. Raring, James W., Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices.
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  183. Raring, James W., Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices.
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  184. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
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  185. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
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  186. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
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  187. Hsu, Po Shan; McLaurin, Melvin; Melo, Thiago P.; Raring, James W., Methods for fabricating light emitting devices.
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  188. Torek, Kevin J.; Derderian, Garo J., Methods of removing material from a semiconductor substrate.
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  189. Chakraborty, Arpan; Grundmann, Michael; Tyagi, Anurag, Miscut bulk substrates.
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  190. Raring, James; Sharma, Rajat; Poblenz, Christiane, Multi color active regions for white light emitting diode.
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  191. Raring, James W.; Huang, Hua, Narrow sized laser diode.
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  192. Raring, James W.; Huang, Hua, Narrow sized laser diode.
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  193. Raring, James W.; Huang, Hua, Narrow sized laser diode.
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  194. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
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  195. Raring, James W., Optical device structure using GaN substrates and growth structure for laser applications.
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  196. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  197. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  198. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  199. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  200. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  201. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  202. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  203. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  204. Raring, James W., Optical device structure using GaN substrates and growth structures for laser applications.
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  205. Raring, James W.; Feezell, Daniel F.; Pfister, Nicholas J.; Sharma, Rajat, Optical device structure using GaN substrates for laser applications.
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  206. Raring, James W.; Feezell, Daniel F.; Pfister, Nicholas J.; Sharma, Rajat; Schmidt, Mathew C.; Elsass, Christiane Poblenz; Chang, Yu-Chia, Optical device structure using GaN substrates for laser applications.
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  207. Raring, James W.; Feezell, Daniel F.; Pfister, Nicholas J.; Sharma, Rajat; Schmidt, Mathew C.; Elsass, Christiane Poblenz; Chang, Yu-Chia, Optical device structure using GaN substrates for laser applications.
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  208. Raring, James W.; Feezell, Daniel F.; Pfister, Nicholas J.; Sharma, Rajat; Schmidt, Mathew C.; Poblenz, Christiane; Chang, Yu-Chia, Optical device structure using GaN substrates for laser applications.
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  209. Raring, James W., Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm.
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  210. Janos, Alan C.; Cardoso, Andre G.; Richardson, Daniel B., Optimized optical system design for endpoint detection.
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  211. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
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  212. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
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  213. Lubomirsky, Dmitry, Oxygen compatible plasma source.
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  214. Han, Qingyan; Berry, Ivan; Sakthivel, Palani; Ruffin, Ricky; Dahimene, Mahmoud, Oxygen free plasma stripping process.
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  215. Becknell, Alan Frederick; Buckley, Thomas James; Ferris, David; Pingree, Jr., Richard E.; Sakthivel, Palanikumaran; Srivastava, Aseem Kumar; Waldfried, Carlo, Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith.
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  216. Srivastava, Aseem Kumar; Sakthivel, Palanikumaran; Buckley, Thomas James, Plasma ashing apparatus and endpoint detection process.
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  217. Han, Qingyuan; Berry, Ivan; Sakthivel, Palani; Waldfried, Carlo, Plasma ashing process.
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  218. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
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  219. Hoog Josef T. (Novato CA) Mitzel James W. (Richmond CA), Plasma reactor removable insert.
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  220. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
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  221. Katona, Thomas M.; Raring, James W.; D'Evelyn, Mark P.; Krames, Michael R., Power light emitting diode and method with current density operation.
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  222. Katona, Thomas M.; Raring, James W.; D'Evelyn, Mark P.; Krames, Michael R.; David, Aurelien J. F., Power light emitting diode and method with uniform current density operation.
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  223. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
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  224. Jacob Adir (23 Juniper La. Framingham MA 01701), Process and apparatus for dry sterilization of medical devices and materials.
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  225. Jacob Adir (23 Juniper La. Framingham MA 01701), Process and apparatus for dry sterilization of medical devices and materials.
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  226. Wuester,Christopher D., Process flow thermocouple.
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  227. Jacob Adir (23 Juniper La. Framingham MA 01701), Process for dry sterilization of medical devices and materials.
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  228. Jacob Adir (23 Juniper La. Framingham MA 01701), Process for dry sterilization of medical devices and materials.
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  229. Hallock, John Scott; Becknell, Alan Frederick; Sakthivel, Palani, Process for removal of photoresist after post ion implantation.
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  230. Kaito Takashi (Tokyo JPX), Process for repairing pattern film.
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  231. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
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  232. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
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  233. Koizumi Koutarou,JPX ; Tsunekawa Sukeyoshi,JPX ; Kawai Kazuhiko,JPX ; Shimoda Maki,JPX ; Itoh Katsuhiko,JPX ; Itoh Haruo,JPX ; Saito Akio,JPX, Removal method of organic matter and system for the same.
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  234. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
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  235. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
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  236. Mullee,William H.; de Leeuwe,Marc; Roberson, Jr.,Glenn A.; Palmer,Bentley J., Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process.
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  237. Mullee, William H.; de Leeuwe, Marc; Roberson, Jr., Glenn A., Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process.
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  238. Mullee William H. ; de Leeuwe Marc ; Roberson ; Jr. Glenn A., Removal of CMP residue from semiconductors using supercritical carbon dioxide process.
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  239. Bertram, Ronald Thomas; Scott, Douglas Michael, Removal of contaminants from a fluid.
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  240. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
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  241. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
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  242. William H. Mullee ; Maximilian A. Biberger ; Paul E. Schilling, Removal of photoresist and residue from substrate using supercritical carbon dioxide process.
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  243. Scovell, Tim, Removal of photoresist through the use of hot deionized water bath, water vapor and ozone gas.
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  244. Koch Robert, Removal of polishing residue from substrate using supercritical fluid process.
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  245. Mullee William H., Removal of resist or residue from semiconductors using supercritical carbon dioxide.
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  246. Yamamoto Masayuki,JPX ; Namikawa Makoto,JPX ; Toyoda Eiji,JPX ; Kuroda Shigeji,JPX ; Miyamoto Saburo,JPX ; Matsushita Takao,JPX, Resist removing apparatus and method.
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  247. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
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  248. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
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  249. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
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  250. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
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  251. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
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  252. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
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  253. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
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  254. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
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  255. Raring, James W.; Feezell, Daniel F.; Pfister, Nick, Self-aligned multi-dielectric-layer lift off process for laser diode stripes.
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  256. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
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  257. Gilton, Terry L.; Li, Li, Semiconductor fabrication apparatus.
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  258. McLaurin, Melvin; Sztein, Alexander; Hsu, Po Shan; Raring, James W., Semiconductor laser diode on tiled gallium containing material.
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  259. McLaurin, Melvin; Sztein, Alexander; Hsu, Po Shan; Raring, James W., Semiconductor laser diode on tiled gallium containing material.
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  260. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
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  261. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
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  262. Yamamoto,Yoshiharu, Semiconductor substrate cleansing apparatus.
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  263. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
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  264. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
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  265. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
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  266. Sharma, Rajat; Hall, Eric M.; Poblenz, Christiane; D'Evelyn, Mark P., Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods.
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  267. Raring, James W.; Feezell, Daniel F.; Nakamura, Shuji, Solid-state optical device having enhanced indium content in active regions.
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  268. Toshima,Takayuki; Abe,Hitoshi, Substrate processing apparatus and substrate processing method.
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  269. Toshima,Takayuki; Ueno,Kinya; Yamasaka,Miyako; Tsutsumi,Hideyuki; Iino,Tadashi; Kamikawa,Yuji, Substrate processing apparatus for resist film removal.
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  270. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
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  271. Krames, Michael R.; Trottier, Troy; Steranka, Frank M.; Houck, William D.; Chakraborty, Arpan, System and method for providing color light sources in proximity to predetermined wavelength conversion structures.
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  272. Krames, Michael; Trottier, Troy; Steranka, Frank; Houck, William; Chakraborty, Arpan, System and method for providing color light sources in proximity to predetermined wavelength conversion structures.
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  273. Park, Soonam; Zhu, Yufei; Suarez, Edwin C.; Ingle, Nitin K.; Lubomirsky, Dmitry; Huang, Jiayin, Systems and methods for internal surface conditioning assessment in plasma processing equipment.
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  274. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
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  275. Yokota, Yoshitaka; Ramamurthy, Sundar; Achutharaman, Vedapuram; Czarnik, Cory; Behdjat, Mehran; Olsen, Christopher, Thermal oxidation of silicon using ozone.
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  276. Kurita, Shinichi; Beer, Emanuel; Nguyen, Hung T.; Blonigan, Wendell T., Transfer chamber for vacuum processing system.
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  277. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
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  278. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
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  279. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
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  280. Zajac John (San Jose CA), Wafer support system.
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  281. Suzuki, Masaaki, Washing apparatus with UV exposure and first and second ultrasonic cleaning vessels.
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  282. Yokota, Yoshitaka; Ramamurthy, Sundar; Achutharaman, Vedapuram; Czarnik, Cory; Behdjat, Mehran; Olsen, Christopher, Water cooled gas injector.
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  283. Rudy, Paul; Raring, James W.; Goutain, Eric; Huang, Hua, Wearable laser based display method and system.
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  284. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
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  285. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
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