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A process for defining improved tapered openings in glass coatings requires that passivating layers be formed of a doped silicon oxide having a relatively low flow temperature formed on a layer of undoped silicon oxide. After the contact openings are formed, both oxide layers are heated to a tempera

A process for defining improved tapered openings in glass coatings requires that passivating layers be formed of a doped silicon oxide having a relatively low flow temperature formed on a layer of undoped silicon oxide. After the contact openings are formed, both oxide layers are heated to a temperature below the flow temperature of the doped layer for a period of time sufficient to only soften and partially reflow the doped layer, the temperature being insufficient to form a significant oxide growth on the exposed portion of the semiconductor body.

대표청구항 ▼

A process for forming a tapered opening in a glass passivating coating on the surface of a semiconductor body comprising the steps of: forming a layer of dense, undoped silicon oxide on the semiconductor body; forming a layer of ternary doped silicon oxide on the undoped layer, the doped layer chara

A process for forming a tapered opening in a glass passivating coating on the surface of a semiconductor body comprising the steps of: forming a layer of dense, undoped silicon oxide on the semiconductor body; forming a layer of ternary doped silicon oxide on the undoped layer, the doped layer characterized by having a given flow temperature; forming a contact opening in both silicon oxide layers to expose a portion of the semiconductor body; and heating both oxide layers to a temperature below the given flow temperature of the doped layer for a period of time sufficient to only soften and partially reflow the doped layer at the edges of the contact opening yet insufficient to form a significant oxide growth on the exposed portion of the semiconductor body.