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High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric condi 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F04F-009/04
출원번호 US-0147205 (1980-05-06)
발명자 / 주소
  • Tscheppe Andrew (Watertown CT)
출원인 / 주소
  • Risdon Corporation (Naugatuck CT 02)
인용정보 피인용 횟수 : 84  인용 특허 : 1

초록

Water contamination of the oil in vacuum pumps of high vacuum systems is a major problem in maintaining efficient operation of those pumps. The problem is especially acute where a system includes an evacuated work chamber that must be repeatedly opened for loading products into and unloading them fr

대표청구항

In processing work products in a high vacuum work chamber which is repeatedly opened and closed to atmosphere in loading said products into and unloading them from said chamber, wherein there are employed in conjunction with said chamber first stage and final stage vacuum pump means, a roughing vacu

이 특허에 인용된 특허 (1)

  1. Mahl Gunard O. B. (San Francisco CA), Evacuation apparatus with cryogenic pump and trap assembly.

이 특허를 인용한 특허 (84)

  1. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  2. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.
  3. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.
  4. Stevens Joe ; Thompson Allen ; Cowan Norman ; Alvarez David, Apparatus and method for compressing high purity gas.
  5. Jones Mark (Mesa AZ) Letrich George (Mesa AZ), Aspirator pump device for use in semiconductor processing.
  6. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  7. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  8. Lubomirsky, Dmitry, Chamber with flow-through source.
  9. Lubomirsky, Dmitry, Chamber with flow-through source.
  10. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  11. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.
  12. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.
  13. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.
  14. Zito Richard R. (Tucson AZ), Controlled multiple storage vessel gas trap.
  15. Graves, Clint; Marcon, Mario, Cryogenic trap and pump system.
  16. Gaudet,Peter W.; Olsen, legal representative,Carol; Eacobacci,Michael J.; Harvell, legal representative,Olive; Olsen, deceased,Donald A.; Harvell, deceased,John T., Cryopump temperature control of arrays.
  17. Bartlett Allen J. ; Eacobacci ; Jr. Michael J. ; Johnson Joseph P., Cryopump with gas heated exhaust valve and method of warming surfaces of an exhaust valve.
  18. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.
  19. Gaudet Peter W. (Chelmsford MA) Olsen Donald A. (Millis MA) Eacobacci Michael J. (Randolph MA) Harvell John T. (Sudbury MA) Lepofsky Robert J. (Wellesley MA) Roche David E. (Nashua NH) Bender Steven , Electronically controlled cryopump.
  20. Gaudet Peter W. ; Olsen Donald A., Electronically controlled cryopump.
  21. Gaudet, Peter W.; Carol Olsen; Eacobacci, Michael J.; Olsen, Donald A., Electronically controlled cryopump.
  22. Peter W. Gaudet ; Donald A. Olsen, Electronically controlled cryopump.
  23. Gaudet, Peter W.; Lepofsky, Robert J.; Weeks, Alan L.; Fortier, Gerald J.; Matt?, Stephen R.; Stein, Martin; Rosner, Steven C., Electronically controlled vacuum pump.
  24. Peter W. Gaudet ; Robert J. Lepofsky ; Alan L. Weeks ; Gerald J. Fortier ; Stephen R. Matte ; Martin Stein ; Steven C. Rosner, Electronically controlled vacuum pump.
  25. Gaudet Peter W. ; Eacobacci Michael J. ; Lepofsky Robert J. ; Roche David E. ; Weeks Alan L. ; Fortier Gerald J. ; Matte Stephen R. ; Stein Martin ; Rosner Steven C., Electronically controlled vacuum pump with control module.
  26. Malik,Shamim; Hossainy,Syed F. A., Electrostatic loading of drugs on implantable medical devices.
  27. Malik,Shamim; Hossainy,Syed F. A., Electrostatic loading of drugs on implantable medical devices.
  28. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.
  29. Hashizume, Junichiro; Ueda, Shigenori; Okamura, Ryuji, Exhaust process and film depositing method using the exhaust process.
  30. Hashizume Junichiro,JPX ; Ueda Shigenori,JPX ; Okamura Ryuji,JPX, Exhaust system and vacuum processing apparatus.
  31. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.
  32. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  33. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.
  34. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.
  35. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  36. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  37. Maher Joseph ; Olmsted Richard W., Integrated turbo pump and control valve system.
  38. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.
  39. Piunno Carmen (The Woodlands TX) Livesey Stephen (Victoria TX AUX) Linner John G. (The Woodlands TX) del Campo Anthony A. (Houston TX) Zaltzberg Mark J. (The Woodlands TX), Method and apparatus for cryopreparing biological tissue.
  40. Burton Clive H., Method and apparatus for vacuum coating plastic parts.
  41. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  42. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
  43. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  44. Cho Nam-sik,KRX, Multi-step pressure reducing method and apparatus.
  45. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  46. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  47. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  48. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  49. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  50. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.
  51. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  52. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  53. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  54. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  55. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  56. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  57. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  58. Micak,Michael; Wightman,David A., Refrigerated compartment with controller to place refrigeration system in sleep-mode.
  59. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  60. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  61. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
  62. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  63. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  64. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  65. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  66. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  67. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  68. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  69. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  70. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  71. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  72. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  73. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
  74. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  75. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  76. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  77. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  78. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  79. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  80. Park, Soonam; Zhu, Yufei; Suarez, Edwin C.; Ingle, Nitin K.; Lubomirsky, Dmitry; Huang, Jiayin, Systems and methods for internal surface conditioning assessment in plasma processing equipment.
  81. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  82. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  83. Gannon Raymond (London GB2), Vacuum flow device.
  84. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
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