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Amorphous film solar cell 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/06
출원번호 US-0235921 (1981-02-19)
우선권정보 JP-0019951 (1980-02-19)
발명자 / 주소
  • Yamauchi Yutaka (Nara JPX)
출원인 / 주소
  • Sharp Kabushiki Kaisha (Osaka JPX 03)
인용정보 피인용 횟수 : 55  인용 특허 : 0

초록 ▼

An amorphous film solar cell of p-i-n heterojunction type, which is produced through the combination of group III-V compound amorphous semiconductor films with a layer of fluorinated or hydrogenated amorphous silicon semiconductor material. Selection of the p-i-n layer construction is easier compare

대표청구항 ▼

An amorphous film solar cell of heterojunction type having a p-i-n construction, comprising a p type or n type amorphous semiconductor layer made of a group III-V material and at least an i (intrinsic) type semiconductor layer made of fluorinated or hydrogenated amorphous silicon semiconductor mater

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