초록 ▼

Disclosed is a method of forming a deposit, such as silicon, by the reaction of a reactant, such as lithium, with a gas containing the element or compound to be deposited, such as silicon tetrachloride. One reactant diffuses through the growing scale on a heated inert substrate to react with the gas

Disclosed is a method of forming a deposit, such as silicon, by the reaction of a reactant, such as lithium, with a gas containing the element or compound to be deposited, such as silicon tetrachloride. One reactant diffuses through the growing scale on a heated inert substrate to react with the gas on the other side of the scale and lead to further scale growth.

대표청구항 ▼

A method of forming a dense layer of a polycrystalline metal M according to the reaction [Figure] where M is selected from the group consisting of elements of periodic table groups III, IV, and V and mixtures thereof, each X is independently selected from the group consisting of chlorine, bromine, a

A method of forming a dense layer of a polycrystalline metal M according to the reaction [Figure] where M is selected from the group consisting of elements of periodic table groups III, IV, and V and mixtures thereof, each X is independently selected from the group consisting of chlorine, bromine, and iodine, R is selected from the group consisting of hydrogen, elements of periodic table groups I and II to atomic number 30, and mixtures thereof, n is the valence of M, and m is n/valence of R, comprising (A) heating an inert substrate which separates said mR from said MXn and which is permeable by said mR, to a temperature high enough to vaporize said [Figure] (B) heating said mR on one side of said substrate sufficiently to diffuse it through said substrate; and (C) heating said MXn on the other side of said substrate sufficiently to vaporize it.