초록 ▼

A multi-functional sensor capable of sensing the humidity and the concentration of reducing gases in the surrounding atmosphere with a single sensing element of p-type metal-oxide ceramic semiconductor is provided. When the ambient temperature is lower than 150° C., the sensor can detect humidity in

A multi-functional sensor capable of sensing the humidity and the concentration of reducing gases in the surrounding atmosphere with a single sensing element of p-type metal-oxide ceramic semiconductor is provided. When the ambient temperature is lower than 150° C., the sensor can detect humidity in terms of variations in ion conduction due to the physical absorption of water by the sensing element, but when the ambient temperature or the temperature of the sensing element is at temperatures between 200° and 600° C., the sensor can detect the presence or concentration of reducing gases in the surrounding atmosphere in terms of variations in electron conduction due to the chemical absorption of gases by the sensing element.

대표청구항 ▼

1. A multi-functional sensor capable of detecting humidity and a gas or gases comprising (a) a sensing element consisting essentially of a p-type metal-oxide ceramic semiconductor, (b) means attached to said sensing element for detecting or measuring humidity in terms of variations in ion conduc

1. A multi-functional sensor capable of detecting humidity and a gas or gases comprising (a) a sensing element consisting essentially of a p-type metal-oxide ceramic semiconductor, (b) means attached to said sensing element for detecting or measuring humidity in terms of variations in ion conduction due to the physical absorption of water, temperature lower than 150° C., and (c) means attached to said sensing element for detecting or measuring a gas or gases in terms of variations in electron conduction due to the chemical absorption of said gas or gases at temperature between 200° C. and 600° C. 2. A multi-functional sensor as set forth in claim 1 further comprising a heating means for heating said single sensing element at temperatures between 200° C. and 600° C. 3. A multi-functional sensor as set forth in claim 2 wherein said heating means is disposed adjacent to said single sensing element. 4. A multi-functional sensor as set forth in claim 2 wherein said heating means is formed integral with said single sensing element. 5. A multi-functional sensor as set forth in claim 1 wherein the major component of said p-type metal-oxide ceramic semiconductor consists of at least one compound selected from the group consisting of MgCr 2 O 4, FeCr 2 O 4, NiCr 2 O 4, MnCr 2 O 4, CuCr 2 O 4, CoCr 2 O 4 and ZnCr 2 O 4 . 6. A multi-functional sensor as set forth in claim 1 wherein said p-type metal-oxide ceramic semiconductor is made of a compound expressed by (1-x) MgCr 2 O 4 --xTiO 2, where 0<x<0.95.