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Multi-planar electrode plasma etching

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-015/00
출원번호 US-0337372 (1982-01-06)
발명자 / 주소
  • Maher, Jr., Joseph A.
  • Zafiropoulo, Arthur W.
출원인 / 주소
  • Drytek, Inc.
대리인 / 주소
    Mrose, James E.
인용정보 피인용 횟수 : 45  인용 특허 : 12

초록

Dry plasma etching of a plurality of planar thin-film semiconductor wafers is effected simultaneously and uniformly in a relatively small chamber enveloping a vertically-stacked array of laminar electrode sub-assemblies each of which includes a pair of oppositely-excited electrode plates tightly san

대표청구항

1. Apparatus for interacting gas plasma with workpieces, comprising chamber means including means for providing within it gaseous environment from which plasma can be generated under influence of applied electrical potentials, a multi-electrode assembly for applying said potentials across separated

이 특허에 인용된 특허 (12)

  1. Uehara Akira (Yokohama JPX) Kiyota Hiroyuki (Hiratsuka JPX) Miyazaki Shigekazu (Sagamihara JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for automatic semi-batch sheet treatment of semiconductor wafers by plasma reaction.
  2. Kudo Daiziro (Yokohama JPX), Apparatus for plasma treatment of semiconductor materials.
  3. Davies John T. (El Sobrante CA) Reichelderfer Richard F. (Castro Valley CA), Computer controlled system for processing semiconductor wafers.
  4. Yamamoto Shinichi (Yokohama JPX) Sumitomo Yasusuke (Yokohama JPX) Horiike Yasuhiro (Tokyo JPX) Shibagaki Masahiro (Hiratsuka JPX), Etching apparatus using a plasma.
  5. Welty Joseph M. (Hayward CA), Gas plasma reactor for circuit boards and the like.
  6. Kohman Wayne E. (Wilton CT) Maleri Joseph E. (Bridgeport CT), Load-lock vacuum chamber.
  7. Dozier Alfred R. (9332 Portsmouth Dr. Huntington Beach CA 92646), Mounting and excitation system for reaction in the plasma state.
  8. Engle ; Jr. George M. (San Jose CA), Plasma enhanced chemical vapor processing of semiconductive wafers.
  9. Engle Frank W. (Pleasanton CA), Plasma reactor and method therefor.
  10. Gorin Georges J. (Emeryville CA) Lindsey ; Jr. Paul C. (Lafayette CA), Reactor apparatus for plasma etching or deposition.
  11. Bartlett Charles J. (Madison NJ) Rhodes Ronald J. (South Plainfield NJ) Rust Ray D. (Berkeley Heights NJ), Treating multilayer printed wiring boards.
  12. Reavill Joseph A. (Mira Loma CA), Uniform plasma etching system.

이 특허를 인용한 특허 (45)

  1. Muka Richard S., Apparatus and method for batch thermal conditioning of substrates.
  2. Hartsough Larry D. (Berkeley CA), Apparatus and process for sputter deposition of reacted thin films.
  3. Muka Richard S. (Topsfield MA) Pippins Michael W. (Hamilton MA) Drew Mitchell A. (Portsmouth NH), Batchloader for substrate carrier on load lock.
  4. Mitsui, Nobuyuki; Inada, Hiroshi, Deposition method for semiconductor laser bars using a clamping jig.
  5. Muka Richard S. (Topsfield MA), Door drive mechanisms for substrate carrier and load lock.
  6. Ohkawa Tihiro, Grazing angle plasma polisher (GAPP).
  7. Rigali,Louis A.; Hoffman,David E.; Wang,Keda; Smith, III,William F., High throughput plasma treatment system.
  8. Mashima,Hiroshi; Kawamura,Keisuke; Takano,Akemi; Takeuchi,Yoshiaki; Shigemizu,Tetsuro; Aoi,Tatsufumi, High-frequency power supply structure and plasma CVD device using the same.
  9. Chiu, Kin-Chung Ray, Highly efficient compact capacitance coupled plasma reactor/generator and method.
  10. Chiu, Kin-Chung Ray, Highly efficient compact capacitance coupled plasma reactor/generator and method.
  11. Chiu,Kin Chung Ray, Highly efficient compact capacitance coupled plasma reactor/generator and method.
  12. Chiu,Kin Chung Ray, Highly efficient compact capacitance coupled plasma reactor/generator and method.
  13. Machado, Ricardo; Ristow, Jr., Waldyr; Klein, Aloisio Nelmo; Muzart, Joel Louis Rene; Fredel, Marcio Celso; Wendhausen, Paulo Antonio Pereira; Fusão, Davi; Alba, Paulo Roberto; Oliveira da Silva, Nilton Francisco; Mendes, Luciano Antonio, Industrial plasma reactor for plasma assisted thermal debinding of powder injection-molded parts.
  14. Robert C. Cook ; Daniel L. Brors, Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors.
  15. Paranjpe,Ajit P., Method and apparatus for layer by layer deposition of thin films.
  16. Christopher A. Hofmeister, Method of transferring substrates with two different substrate holding end effectors.
  17. Winniczek Jaroslaw W. ; Dassapa M. J. Francois Chandrasekar ; Hudson Eric A. ; Wiepking Mark, Methods and apparatus for determining an etch endpoint in a plasma processing system.
  18. Winniczek, Jaroslaw W.; Dassapa, M. J. Francois Chandrasekar; Hudson, Eric A.; Wiepking, Mark, Methods and apparatus for determining an etch endpoint in a plasma processing system.
  19. Muka Richard S., Multi-level substrate processing apparatus.
  20. Muka Richard S., Multi-level substrate processing apparatus.
  21. Rough J. Kirkwood H. (264 S. 14th St. San Jose CA 95112) Rose Peter W. (1000 Almanor Ave. Menlo Park CA 94025), Multiple electrode plasma reactor power distribution system.
  22. Fazlin Fazal A. (St. Petersburg FL), Paired electrodes for plasma chambers.
  23. Sherman Daniel M. ; Wilkinson Stephen P. ; Roth J. Reece, Paraelectric gas flow accelerator.
  24. Elliott, David J.; Thompson, Allan R.; Whitten, George D.; Camp, Jonathan C.; Krajewski, Mark T., Photocatalytic reactor system for treating flue effluents.
  25. Maruyama Kazumi (Kanagawa JPX), Plasma CVD apparatus.
  26. Massler, Orlaw; Eberle, Hubert; Gschwend, Patrick, Plasma booster for plasma treatment installation.
  27. Massler, Orlaw; Eberle, Hubert; Gschwend, Patrick, Plasma booster for plasma treatment installation.
  28. Massler, Orlaw; Eberle, Hubert; Gschwend, Patrick, Plasma booster for plasma treatment installation.
  29. Kishimoto, Katsushi; Fukuoka, Yusuke, Plasma processing apparatus and semiconductor device manufactured by the same apparatus.
  30. Kishimoto, Katsushi; Fukuoka, Yusuke, Plasma processing apparatus and semiconductor device manufactured by the same apparatus.
  31. Rudder Ronald Alan ; Hendry Robert Carlisle ; Hudson George Carlton, Plasma treatment apparatus.
  32. Rubin Richard H. (West Paterson NJ) Hillman Gary (Livingston NJ) Zarr Lewis E. (Sparta NJ) Hayes William K. (Parsippany NJ), Process apparatus and method and elevator mechanism for use in connection therewith.
  33. Turlot, Emmanuel; Chevrier, Jean-Baptiste; Schmitt, Jacques; Barreiro, Jean, RF plasma reactor having a distribution chamber with at least one grid.
  34. Brandeis Christine (Sindelfingen DEX) Kempf Jurgen (Schonaich DEX) Kraus Georg (Wildeberg DEX) Knzel Ulrich (Kusterdingen DEX), Reactor for reactive ion etching and etching method.
  35. Roth, J. Reece, Remote exposure of workpieces using a plasma.
  36. J. Reece Roth, Remote exposure of workpieces using a recirculated plasma.
  37. Elliott,David J.; Harte,Kenneth J.; Shephard,Larry E., Scanning plasma reactor.
  38. Hofmeister Christopher, Substrate carrier as batchloader.
  39. Muka Richard S. ; Davis ; Jr. James C. ; Hofmeister Christopher A., Substrate transport apparatus with double substrate holders.
  40. Muka Richard S. ; Davis ; Jr. James C. ; Hofmeister Christopher A., Substrate transport apparatus with double substrate holders.
  41. Maher Joseph A. ; Vowles E. John ; Napoli Joseph D. ; Zafiropoulo Arthur W. ; Miller Mark W., System for processing substrates.
  42. Cook, Robert C.; Brors, Daniel L., Thermal gradient enhanced CVD deposition at low pressure.
  43. Condrashoff, Robert S.; Fazio, James P.; Getty, James D.; Tyler, James S., Ultra high speed uniform plasma processing system.
  44. Cook Robert C. ; Brors Daniel L., Vertical plasma enhanced process apparatus and method.
  45. Hillman Gary, Wafer handling method and apparatus.
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