초록 ▼

A process of preparing silicon tetrafluoride by introducing hydrogen fluoride gas into a dispersion of powdery silicon oxide material, which needs not to be pure SiO 2, in sulfuric acid not lower than 65% in the concentration of H 2 SO 4 . The reaction takes place even at room temperature. By using

A process of preparing silicon tetrafluoride by introducing hydrogen fluoride gas into a dispersion of powdery silicon oxide material, which needs not to be pure SiO 2, in sulfuric acid not lower than 65% in the concentration of H 2 SO 4 . The reaction takes place even at room temperature. By using amorphous silicon oxide material, the rate of reaction can be enhanced with better yield. Preferably, the concentration of H 2 SO 4 in the liquid phase of the reaction system is maintained above 80% to obtain SiF 4 containing little (SiF 3 ) 2 O.

대표청구항 ▼

1. A process of preparing silicon tetrafluoride, comprising the step of introducing hydrogen fluoride gas into a slurry obtained by dispersing a silicon oxide material in finely divided form in sulfuric acid wherein the principle component of said silicon oxide material is amorphous silicon oxide su

1. A process of preparing silicon tetrafluoride, comprising the step of introducing hydrogen fluoride gas into a slurry obtained by dispersing a silicon oxide material in finely divided form in sulfuric acid wherein the principle component of said silicon oxide material is amorphous silicon oxide such that the concentration of H 2 SO 4 in the liquid phase of the reaction system never becomes lower than 65% before completion of reaction between hydrogen fluoride and silicon oxide wherein the reaction is carried out at a temperature between room temperature and about 55° C. 2. A process according to claim 1, wherein said silicon oxide material is a natural mineral. 3. A process according to claim 2, wherein said silicon oxide material is selected from the group consisting of activated clay, opal and diatomaceous earth. 4. A process according to claim 1, wherein said silicon oxide material is a synthetic material. 5. A process according to claim 4, wherein said silicon oxide formed as a by-product in the preparation of cryolite from sodium hexafluorosilicate. 6. A process according to claim 1, wherein the weight ratio of H 2 SO 4 to SiO 2 in said slurry before the introduction of hydrogen fluoride gas is in the range from 3:1 to 10:1. 7. A process according to claim 1, wherein the concentration of H 2 SO 4 in the liquid phase of the reaction system is maintained above 80% until completion of the reaction. 8. A process according to claim 1, wherein the concentration of H 2 SO 4 in the liquid phase of the reaction system is maintained above 85% until completion of the reaction. 9. A process according to claim 1, wherein the introduction of hydrogen fluoride gas into said slurry is commenced while said slurry is maintained at room temperature.