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A high-current, high-voltage semiconductor device is fabricated on a metallurgical grade substrate of a first conductivity type by first growing an epitaxial layer of the first conductivity type on the substrate and then fabricating a semiconductor device thereon designed for high-current, high-volt

A high-current, high-voltage semiconductor device is fabricated on a metallurgical grade substrate of a first conductivity type by first growing an epitaxial layer of the first conductivity type on the substrate and then fabricating a semiconductor device thereon designed for high-current, high-voltage applications.

대표청구항 ▼

1. A power semiconductor transistor, comprising: a substrate comprising upgraded metallurgical grade silicon of a first conductivity type; a first silicon epitaxial layer disposed on said substrate and having said first conductivity type; said first epitaxial layer and said substrate having an

1. A power semiconductor transistor, comprising: a substrate comprising upgraded metallurgical grade silicon of a first conductivity type; a first silicon epitaxial layer disposed on said substrate and having said first conductivity type; said first epitaxial layer and said substrate having an interface therebetween; a second silicon epitaxial layer, of second conductivity type, disposed on said first layer; a diffused region, of first conductivity type, extending into the second epitaxial layer from the surface thereof; said transistor having a nominal current rating at which a current density of at least 10 amperes per cm 2 crosses said interface when the transistor is conducting a current equal to its nominal current rating. 2. The device recited in claim 1 further comprising: at least first and second main electrodes for connection in a circuit in which said transistor is to control current flow and a control electrode for controlling the state of the transistor with respect to conduction through the transistor between said first and second main electrodes, the first electrode contacting said diffused region, the second electrode contacting said substrate, and the control electrode contacting said second epitaxial layer. 3. The device recited in claim 2 wherein said first main electrode is an emitter electrode, said second main electrode is a collector electrode and said control electrode is a base electrode. 4. The device recited in claim 1 wherein said current density is at least 100 amperes per square centimeter.