$\require{mediawiki-texvc}$
  • 검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
  • 검색연산자
검색도움말
검색연산자 기능 검색시 예
() 우선순위가 가장 높은 연산자 예1) (나노 (기계 | machine))
공백 두 개의 검색어(식)을 모두 포함하고 있는 문서 검색 예1) (나노 기계)
예2) 나노 장영실
| 두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색 예1) (줄기세포 | 면역)
예2) 줄기세포 | 장영실
! NOT 이후에 있는 검색어가 포함된 문서는 제외 예1) (황금 !백금)
예2) !image
* 검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색 예) semi*
"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"

통합검색

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

특허 상세정보

Vapor mass flow control system

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B01F-003/04   
미국특허분류(USC) 261/64B ; 73/86104 ; 137/10125 ; 261/64D
출원번호 US-0288360 (1981-07-30)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 137  인용 특허 : 5
초록

A system for precisely controlling the mass flow rate of vapor from a bubbler by a carrier gas stream.

대표
청구항

A method for improving the accuracy in supplying a continuous uniform mass flow of vaporized material from a chemical vapor delivery system which includes a container partially filled with material to be vaporized and applied to a vapor using system, said container being at substantially atmospheric pressure, means for ducting a carrier gas through said material to transport said vaporized material, a valve for controlling the flow of said carrier gas to said container, and means for controlling the temperature of the material in said container, said met...

이 특허를 인용한 특허 피인용횟수: 137

  1. Ootsuka, Fumio. 3D stacked multilayer semiconductor memory using doped select transistor channel. USP20181010090316.
  2. Marquardt, David; Shugrue, John. Apparatus and method for calculating a wafer position in a processing chamber under process conditions. USP2015089117866.
  3. Christenson Kurt K. ; Nelson Steven L.. Apparatus and method for dispensing processing fluid toward a substrate surface. USP2001086274506.
  4. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian. Apparatus and method for manufacturing a semiconductor device. USP20181010103040.
  5. Kamiya, Tatsuo. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum. USP2017019543180.
  6. Kido, Shusaku. Apparatus for processing substrate and method of doing the same. USP2014038663488.
  7. Kido, Shusaku. Apparatus for processing substrate and method of doing the same. USP2012108293128.
  8. Fair David L. (Rockford IL). Bubbler container automatic refill system. USP1990124979545.
  9. Fair David L. (Rockford IL). Bubbler container automatic refill system. USP1991085038840.
  10. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco. Cassette holder assembly for a substrate cassette and holding member for use in such assembly. USP20190410249524.
  11. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd. Chamber sealing member. USP2016059340874.
  12. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd. Chamber sealing member. USP2015049005539.
  13. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki. Continuous process incorporating atomic layer etching. USP2017049627221.
  14. Sansegundo-Sanchez, Javier; Benavides-Rel, Xavier; Vales-Canle, Manuel; Tomas-Martinez, Maria. Cooled gas distribution plate, thermal bridge breaking system, and related methods. USP2014118875728.
  15. Oosterlaken, Theodorus G. M.. Delivery of vapor precursor from solid source. USP2011098012876.
  16. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene. Deposition of metal borides. USP20181010087522.
  17. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi. Deposition of metal borides. USP20190110190213.
  18. Yednak, III, Andrew M.; Dunn, Todd; White, Carl; Manasco, Michael. Deposition valve assembly and method of heating the same. USP2015089096931.
  19. Sanchez, Javier San Segundo; Barona, Jose Luis Montesinos; Conejero, Evaristo Ayuso; Canle, Manuel Vicente Vales; Rel, Xavier Benavides; Garcia, Pedro-Tomas Lujan; Martinez, Maria Tomas. Fluidized bed reactor for production of high purity silicon. USP2012058168123.
  20. Sanchez, Javier San Segundo; Barona, Jose Luis Montesinos; Conejero, Evaristo Ayuso; Canle, Manuel Vicente Vales; Rel, Xavier Benavides; Garcia, Pedro-Tomas Lujan; Martinez, Maria Tomas. Fluidized bed reactor for production of high purity silicon. USP2012048158093.
  21. Milligan, Robert Brennan. Formation of boron-doped titanium metal films with high work function. USP20180910083836.
  22. Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio. Gas distribution system, reactor including the system, and methods of using the same. USP20190110167557.
  23. Reid Philip L. (Rte. 2 ; Box 422 Duncan SC 29334). Gas humidification apparatus. USP1986124632789.
  24. Bauch,Hartmut; Bewig,Lars; Klippe,Lutz; K��pper,Thomas. Gas supply method in a CVD coating system for precursors with a low vapor pressure. USP2008087413767.
  25. Yednak, III, Andrew M.; Pettinger, Jr., Frederick L.. Heater jacket for a fluid line. USP2016059341296.
  26. Hunt, Peter John; Thudor, Mohammad; Wixey, David Fraser; McPhee, Stephen William. Humidity controller. USP20181110130787.
  27. Hunt, Peter John; Thudor, Mohammad; Wixey, David; McPhee, Stephen William. Humidity controller. USP2015119186477.
  28. Raabe Otto G. (Davis CA) Lee James I. C. (Sacramento CA). Intermittent signal actuated nebulizer. USP1989054832012.
  29. Furukawahara, Kazunori; Fukuda, Hideaki. Liquid material vaporization apparatus for semiconductor processing apparatus. USP2010117833353.
  30. Shugrue, John; Moen, Ron. Lockout tagout for semiconductor vacuum valve. USP2016089404587.
  31. Schmitt John V. ; Marsh Richard A.. Measurement of quantity of incompressible substance in a closed container. USP2000036038919.
  32. Jung, Sung-Hoon. Metal oxide protective layer for a semiconductor device. USP2016079384987.
  33. Jung, Sung-Hoon. Metal oxide protective layer for a semiconductor device. USP2015028946830.
  34. Pore, Viljami. Method and apparatus for filling a gap. USP20190110177025.
  35. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki. Method and apparatus for filling a gap. USP2017119812320.
  36. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya. Method and apparatus for filling a gap. USP2018029887082.
  37. Schmitt John Vincent. Method and apparatus for monitoring generation of liquid chemical vapor. USP1999105972117.
  38. Oguro Kyoji (Gunma-ken JPX) Kurosawa Yasushi (Gunma-ken JPX). Method and apparatus for supply of liquid raw material gas. USP1997125693189.
  39. Lee,Jai Dong; Hwang,Ki Hyun; Ko,Chang Hyun. Method and apparatus for supplying a source gas. USP2006037007933.
  40. Tolle, John; Hill, Eric; Winkler, Jereld Lee. Method and system for in situ formation of gas-phase compounds. USP2018029890456.
  41. Christenson Kurt K.. Method and system to control the concentration of dissolved gas in a liquid. USP2001056235641.
  42. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike. Method and system to reduce outgassing in a reaction chamber. USP2017109790595.
  43. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike. Method and system to reduce outgassing in a reaction chamber. USP2015038993054.
  44. Winkler, Jereld Lee. Method and systems for in-situ formation of intermediate reactive species. USP2017039589770.
  45. Khandan, Shahab; Fulmer, Christopher T.; Washington, Lori D.; Diniz, Herman P.; Scudder, Lance A.; Samoilov, Arkadii V.. Method for CVD process control for enhancing device performance. USP2005066911401.
  46. Suemori, Hidemi. Method for depositing dielectric film in trenches by PEALD. USP2018039909214.
  47. Kang, DongSeok. Method for depositing thin film. USP2018029891521.
  48. Takamure, Noboru; Okabe, Tatsuhiro. Method for forming Ti-containing film by PEALD using TDMAT or TDEAT. USP2017019556516.
  49. Shiba, Eiichiro. Method for forming aluminum nitride-based film by PEALD. USP2017079711345.
  50. Winkler, Jereld Lee. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same. USP2017039605343.
  51. Fukazawa, Atsuki. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition. USP20190110179947.
  52. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru. Method for forming dielectric film in trenches by PEALD using H-containing gas. USP2016099455138.
  53. Kimura, Yosuke; de Roest, David. Method for forming film having low resistance and shallow junction depth. USP2016109478415.
  54. Ishikawa, Dai; Fukazawa, Atsuki. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches. USP2017099754779.
  55. Namba, Kunitoshi. Method for forming silicon oxide cap layer for solid state diffusion process. USP2017039607837.
  56. Shiba, Eiichiro. Method for performing uniform processing in gas system-sharing multiple reaction chambers. USP2016099447498.
  57. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki. Method for positioning wafers in multiple wafer transport. USP2017109793148.
  58. Kato, Richika; Nakano, Ryu. Method for protecting layer by forming hydrocarbon-based extremely thin film. USP20180810043661.
  59. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori. Method for protecting layer by forming hydrocarbon-based extremely thin film. USP2018029899291.
  60. Steven L. Nelson ; Kurt K. Christenson. Method for treating a substrate with heat sensitive agents. USP2002066406551.
  61. Haukka, Suvi; Shero, Eric James; Alokozai, Fred; Li, Dong; Winkler, Jereld Lee; Chen, Xichong. Method for treatment of deposition reactor. USP2016019228259.
  62. Barbee Steven G. (Dover Plains NY) Devine Gregory P. (Poughquag NY) Patrick William J. (Newburgh NY) Seeley Gerard (Wappingers Falls NY). Method for vacuum vapor deposition with improved mass flow control. USP1988014717596.
  63. Jan Snijders, Gert; Raaijmakers, Ivo. Method for vaporizing non-gaseous precursor in a fluidized bed. USP2013018343583.
  64. Zaitsu, Masaru. Method of atomic layer etching using functional group-containing fluorocarbon. USP2017089735024.
  65. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi. Method of cyclic dry etching using etchant film. USP2017109793135.
  66. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt. Method of forming a structure on a substrate. USP2018039916980.
  67. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja. Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method. USP20190410249577.
  68. Bondestam, Niklas. Method of monitoring evaporation rate of source material in a container. USP2004086779378.
  69. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee. Method of processing a substrate and a device manufactured by using the method. USP20181110134757.
  70. Nelson, Steven L.; Christenson, Kurt K.. Method to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized. USP2003116648307.
  71. Steven L. Nelson ; Kurt K. Christenson. Method to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized. USP2002126488271.
  72. Froehlich, Robert; Mixon, David. Methods and system for cooling a reaction effluent gas. USP2012088235305.
  73. Kohen, David; Profijt, Harald Benjamin. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures. USP20190310236177.
  74. Raisanen, Petri; Givens, Michael Eugene. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures. USP20190310229833.
  75. Tolle, John. Methods of forming films including germanium tin and structures and devices including the films. USP2016079396934.
  76. Margetis, Joe; Tolle, John. Methods of forming highly p-type doped germanium tin films and structures and devices including the films. USP2017059647114.
  77. Margetis, Joe; Tolle, John. Methods of forming silicon germanium tin films and structures and devices including the films. USP2018029905420.
  78. Winkler, Jereld Lee; Shero, Eric James; Alokozai, Fred. Multi-step method and apparatus for etching compounds containing a metal. USP2014118894870.
  79. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan. NbMC layers. USP20190210211308.
  80. Milligan, Robert Brennan; Alokozai, Fred. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same. USP2015059029253.
  81. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L.. Precursor delivery system. USP2017039593416.
  82. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L.. Precursor delivery system. USP2015038986456.
  83. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E; White, Carl L. Precursor delivery system. USP2012038137462.
  84. Hirata, Kaoru; Dohi, Ryousuke; Nishino, Kouji; Ikeda, Nobukazu; Sugita, Katsuyuki. Pressure type flow control system with flow monitoring, and method for detecting anomaly in fluid supply system and handling method at abnormal monitoring flow rate using the same. USP2017049632511.
  85. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike. Process feed management for semiconductor substrate processing. USP2015049017481.
  86. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike. Process feed management for semiconductor substrate processing. USP2018029892908.
  87. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur. Process for forming a film on a substrate using multi-port injection assemblies. USP20190410262859.
  88. Ikeda Towl,JPX. Process gas delivery system for CVD having a cleaning subsystem. USP2000036033479.
  89. Alokozai, Fred; Milligan, Robert Brennan. Process gas management for an inductively-coupled plasma deposition reactor. USP2017039605342.
  90. Alokozai, Fred; Milligan, Robert Brennan. Process gas management for an inductively-coupled plasma deposition reactor. USP20180710023960.
  91. Alokozai, Fred; Milligan, Robert Brennan. Process gas management for an inductively-coupled plasma deposition reactor. USP2015059021985.
  92. Winkler, Jereld Lee. Pulsed remote plasma method and system. USP2016119484191.
  93. Shero, Eric; Halpin, Michael; Winkler, Jerry. Radiation shielding for a substrate holder. USP2015109167625.
  94. Nagase, Masaaki; Hirata, Kaoru; Hidaka, Atushi; Nishino, Kouji; Ikeda, Nobukazu; Nakamura, Takeshi. Raw material vaporizing and supplying apparatus equipped with raw material concentration. USP2017049631777.
  95. Froehlich, Robert; Fieselmann, Ben; Mixon, David; Tsuo, York. Reactor with silicide-coated metal surfaces. USP2013048425855.
  96. George-Gradon, Lewis; McPhee, Stephen William; Seakins, Paul John; Leonard, Peter John. Respiratory humidification system. USP2004026694974.
  97. Gradon Lewis George,NZX ; McPhee Stephen William,NZX ; Seakins Paul John,NZX ; Leonard Peter John,NZX. Respiratory humidification system. USP2001086272933.
  98. Gradon, Lewis George; McPhee, Stephen William; Seakins, Paul John; Leonard, Peter John. Respiratory humidification system. USP200906RE40806.
  99. Gradon,Lewis George; McPhee,Stephen William; Seakins,Paul John; Leonard,Peter John. Respiratory humidification system. USP2007097263994.
  100. Gradon,Lewis George; McPhee,Stephen William; Seakins,Paul John; Leonard,Peter John. Respiratory humidification system. USP200707RE39724.
  101. Gradon,Lewis George; McPhee,Stephen William; Seakins,Paul John; Leonard,Peter John. Respiratory humidification system. USP2006057051733.
  102. Lewis George Gradon NZ; Stephen William McPhee NZ; Paul John Seakins NZ; Peter John Leonard NZ. Respiratory humidification system. USP2002026349722.
  103. McPhee, Stephen William. Respiratory humidification system. USP2004106802314.
  104. McPhee, Stephen William. Respiratory humidification system. USP2003076584972.
  105. Soininen, Pekka T.. Safe liquid source containers. USP2011077971861.
  106. Soininen,Pekka T.. Safe liquid source containers. USP2009037497420.
  107. Soininen,Pekka T.. Safe liquid source containers. USP2007017156380.
  108. Zhu, Chiyu. Selective film deposition method to form air gaps. USP2018019859151.
  109. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min. Semiconductor device and manufacturing method thereof. USP2018029899405.
  110. Raisanen, Petri; Givens, Michael; Verghese, Mohith. Semiconductor device dielectric interface layer. USP2015119177784.
  111. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan. Semiconductor processing reactor and components thereof. USP2016079394608.
  112. Milligan, Robert Brennan; Alokozai, Fred. Semiconductor reaction chamber with plasma capabilities. USP2016089412564.
  113. Milligan, Robert Brennan; Alokozai, Fred. Semiconductor reaction chamber with plasma capabilities. USP2015049018111.
  114. Xie, Qi; Machkaoutsan, Vladimir; Maes, Jan Willem. Semiconductor structure and device and methods of forming same using selective epitaxial process. USP2016019240412.
  115. Arai, Izumi. Single-and dual-chamber module-attachable wafer-handling chamber. USP2017059640416.
  116. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee. Source/drain performance through conformal solid state doping. USP20180710032628.
  117. Weeks, Keith Doran. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same. USP2016049324811.
  118. Tolle, John. Structures and devices including germanium-tin films and methods of forming same. USP2017109793115.
  119. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk. Susceptor for semiconductor substrate processing apparatus. USP201810D830981.
  120. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael. Susceptor heater and method of heating a substrate. USP2015018933375.
  121. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael. Susceptor heater and method of heating a substrate. USP2016039299595.
  122. Dunn, Todd; White, Carl; Halpin, Michael; Shero, Eric; Winkler, Jerry. Susceptor heater shim. USP2015129202727.
  123. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri. System and method for gas-phase sulfur passivation of a semiconductor surface. USP2017019558931.
  124. Mayer, Daniel W.. System and method for generating a gas sample of known and adjustable relative humidity. USP2009087578208.
  125. Tuominen, Marko; Shero, Eric; Verghese, Mohith. System for controlling the sublimation of reactants. USP2012118309173.
  126. Nelson Steven L. ; Christenson Kurt K.. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in. USP1999105971368.
  127. Taylor, Steven R.. Systems and methods for accurately measuring fluid. USP2004116814427.
  128. Lawson, Keith R.; Givens, Michael E.. Systems and methods for dynamic semiconductor process scheduling. USP2017059659799.
  129. Sarin, Michael Christopher; Mendez, Rafael; Bartlett, Gregory M.; Hill, Eric; Lawson, Keith R.; Rosser, Andy. Systems and methods for mass flow controller verification. USP2015109169975.
  130. Smith, Colin F.. Systems and methods for pressure-based liquid flow control. USP2017039605346.
  131. Shero, Eric J.; Raisanen, Petri I.; Jung, Sung-Hoon; Wang, Chang-Gong. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species. USP2014118877655.
  132. Shero, Eric; Raisanen, Petri I.; Jung, Sung Hoon; Wang, Chang-Gong. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species. USP2014118883270.
  133. Barbee Steven G. (Dover Plains NY) Devine Gregory P. (Poughguag NY) Patrick William J. (Newburgh NY) Seeley Gerard (Wappingers Falls NY). Vacuum deposition system with improved mass flow control. USP1987024640221.
  134. Moy, Timothy Y.. Vapor generator and its use in generating vapors in a pressurized gas. USP1985094540531.
  135. Coomer, Stephen Dale. Variable adjustment for precise matching of multiple chamber cavity housings. USP2018059960072.
  136. Shugrue, John Kevin. Variable conductance gas distribution apparatus and method. USP2017059657845.
  137. Schmotzer, Michael; Whaley, Shawn. Variable gap hard stop design. USP20181010087525.