초록

A method of laser trimming thin film resistors on semiconductive substrates wherein the laser is set to a frequency equal to or less than Eg/h, where Eg is the optical band-gap energy of the doped semiconductor substrate, and h is Planck\s constant.

대표청구항 ▼

The method of laser trimming of elements on a doped semiconductive substrate, wherein a laser beam is directed onto the element from the side of the substrate carrying the element and is so controlled as to vaporize or otherwise remove or alter the material of the element so as to achieve a predeter

The method of laser trimming of elements on a doped semiconductive substrate, wherein a laser beam is directed onto the element from the side of the substrate carrying the element and is so controlled as to vaporize or otherwise remove or alter the material of the element so as to achieve a predetermined electrical characteristic for the element; said method further comprising the step of setting the frequency of the laser at a value no greater than Eg/h, where Eg is the optical band-gap energy of the doped substrate and h is Planck\s constant.