[특허]Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition

Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/365 H01L-029/22
출원번호	US-0239080 (1981-02-27)
발명자 / 주소	Stutius Wolfgang E. (Los Altos CA)
출원인 / 주소	Xerox Corporation (Stamford CT 02)
인용정보	피인용 횟수 : 24 인용 특허 : 0

초록 ▼

A low-pressure, low-temperature organometallic chemical vapor deposition (OM-CVD) method for depositing a doped epitaxial layer of a II-VI compound, such as, n-ZnSe, on a substrate in the deposition zone of an OM-CVD reactor. For example, low-resistivity n-type ZnSe with pW1017 cm-3 may be grown epitaxially on (100) GaAs substrates by this method using aluminum as a dopant from a triethylaluminum source. The as-grown layers show a strong near-bandgap photoluminescence peak. The much weaker photoluminescence intensity at longer wavelength indicates that the concentration of deep centers is lower than in doped ZnSe prepared by other prior art methods. Also, no further or post treatment (diffusion or annealing) after growth is necessary.

대표청구항 ▼

A method of depositing a doped epitaxial layer of a II-VI compound on the surface of a substrate in a deposition zone of a reactor of an organometallic chemical vapor deposition system comprising the steps of heating the deposition zone of the reactor to a temperature in the range of about 300°C. to 400°C. to produce pyrolytic action that provides sufficient surface mobility of the compound to be deposited to form a smooth epitaxially deposited layer, the temperature employed in said range being not so high as to produce a substantial concentration of native intrinsic defects, said defects being comparatively smaller in number relative to the number of electrically active doners therein, introducing into the reactor a gas phase composition containing a gaseous mixture of a reactant having a Group II containing component, a reactant having a Group VI containing component and a dopant selected from the Group III for n-type dopant or from the Group V for the p-type dopant, said step of introducing characterized by one of the gas phase reactants thereof and said selected dopant being initially introduced in close proximity to the substrate surface in the deposition zone whereas other gas phase reactants are introduced directly into the reactor proper. selecting a low pressure environment in the range of about 10 mTorr to 200 mTorr in the reactor, said selection sufficient to suppress the probability of the gas phase pyrolytic reaction of said mixture prior to deposition thereof on the substrate. forming said epitaxial layer by contacting the substrate with the introduced mixture in the deposition zone causing the pyrolyzation and deposition on the substrate of an elemental II and VI compound with a predetermined doping concentration.

이 특허를 인용한 특허 (24)

H？rk？nen,Kari; Doczy,Mark; Lang,Teemu; Baxter,Nathan E., Deposition of carbon-and transition metal-containing thin films.
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Ishida, Shuya, Ion source.
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Toyama Yoshiharu,JPX ; Kuroda Akikazu,JPX ; Kiyama Tokuji,JPX ; Kida Sumio,JPX ; Yoshida Shunji,JPX ; Yamamoto Takashi,JPX ; Atsumi Tetsuya,JPX, Method and apparatus for feeding a gas for epitaxial growth.
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Choi Sung-Woo,KRX ; Baek Jong-Hyeob,KRX ; Lee Bun,KRX, Method for growing epitaxial layers of III-V compound semiconductors.
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Kurisu, Kenichi; Imamura, Hideaki, Method for manufacturing diffractive optical element.
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Taguchi Tsunemasa (Suita JPX) Nanba Hirokuni (Osaka JPX), Method for producing semiconductive single crystal.
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Taguchi Tsunemasa (Suita JPX) Nanba Hirokuni (Osaka JPX), Method for producing semiconductive single crystal.
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Lee Ming-Kwei,TWX ; Yeh Min-Yen,TWX, Method of fabricating opto-electronic device.
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Tokunaga Hiroyuki,JPX ; Hanna Jun-ichi,JPX ; Shimizu Isamu,JPX, Method of forming crystalline compound semiconductor film.
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Taskar Nikhil (Ossining NY) Khan Babar A. (Ossining NY) Dorman Donald R. (Carmel NY), Method of growing epitaxial layers of N-doped II-VI semiconductor compounds.
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Nishizawa Jun-ichi (Sendai JPX), Method of making a Group II-VI compound semiconductor device by solution growth.
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Inoue Tetsuya (Hyogo JPX) Otsuki Makoto (Hyogo JPX) Yokota Tetsuichi (Hyogo JPX), Method of making compound semiconductor single-crystalline substrate for liquid phase epitaxial growth.
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Vierheilig,Albert A., Mixed metal oxide additives.
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Vierheilig,Albert, Mixed metal oxide sorbents.
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Elliott James (Allston MA) Hoke William E. (Wayland MA) Kreismanis Vilnis G. (Belmont MA), Photo-enhanced pyrolytic MOCVD growth of group II-VI materials.
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Nouhi Akbar (Whittier CA) Stirn Richard J. (Diamond Bar CA), Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition.
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Nelson Andrew (Felixstowe GB2) Cole Simon (Martlesham Heath GB2) Harlow Michael J. (Ipswich GB2) Wong Stanley Y. K. (Ipswich GB2), Preparation of semiconductor devices.
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Neumark Gertrude F. (153 Old Colony Rd. Hartsdale NY 10530), Process for doping crystals of wide band gap semiconductors.
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Ishihara Shunichi (Ebina JPX) Ohno Shigeru (Yokohama JPX) Kanai Masahiro (Tokyo JPX) Oda Shunri (Tokyo JPX) Shimizu Isamu (Yokohama JPX), Process for forming a deposited film.
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Taskar Nikhil R. ; Dorman Donald R. ; Gallagher Dennis, Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced.
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Enstrom Ronald E. (Skillman NJ), Vapor deposition apparatus and method of using same.
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Fujita Shigeo (Kyoto JPX) Matsuda Yoshinobu (Ashiya JPX) Sasaki Akio (Kyoto JPX), Vapor phase epitaxial growth method of zinc selenide and zinc selenide-sulphide by organometallic chemical vapor deposit.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
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A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition 원문보기

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Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition 원문보기

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