초록 ▼

Method and apparatus are disclosed for plasma treating a substrate in a hermetic chamber with a magnetic field having lines of force which leave a support, extend across the surface of the substrate and re-enter the support to enclose the substrate exposed surface in a magnetic electron-trapping fie

Method and apparatus are disclosed for plasma treating a substrate in a hermetic chamber with a magnetic field having lines of force which leave a support, extend across the surface of the substrate and re-enter the support to enclose the substrate exposed surface in a magnetic electron-trapping field. The voltage applied to the substrate support is adjusted to produce a dense glow discharge closely adjacent the substrate surface for reacting chemically therewith.

대표청구항 ▼

A method of plasma processing which includes the steps of placing at least one substrate on a substrate support electrode positioned in a hermetic chamber, evacuating the chamber, introducing a reactant gas into the chamber, and applying a voltage to the substrate support, wherein the improvement co

A method of plasma processing which includes the steps of placing at least one substrate on a substrate support electrode positioned in a hermetic chamber, evacuating the chamber, introducing a reactant gas into the chamber, and applying a voltage to the substrate support, wherein the improvement comprises: providing a magnetic field having lines of force which leave the support electrode, extend across the surface of the substrate exposed to the coating source, and re-enter the support to enclose said exposed surface in a magnetic electron-trapping field; adjusting the voltage applied to the substrate support to produce a dense glow discharge closely adjacent to said substrate surface such that molecules of the reactant gas become ionized and are electrically attracted to the substrate; and chemically reacting a selected material on the surface of the substrate with ions of the reactant gas.