초록 ▼

A thick-film multi-layer wiring board in which the thick-film resistor provided in the inner layer is coated with a glass material selected from (a) and (b) below: (a) crystallized glass which is crystallized at 850°C. or above, and (b) amorphous glass having a softening temperature of 750°C. or abo

A thick-film multi-layer wiring board in which the thick-film resistor provided in the inner layer is coated with a glass material selected from (a) and (b) below: (a) crystallized glass which is crystallized at 850°C. or above, and (b) amorphous glass having a softening temperature of 750°C. or above and composed of glass and at least one refractory oxide selected from Al2O3 and SiO2.

대표청구항 ▼

In a thick-film multi-layer wiring board which comprises a substrate, a first resistor circuit comprising a thick film conductor and a thick film resistor, said first resistor circuit being provided on the substrate, a first insulating layer with through-holes being provided on the first resistor ci

In a thick-film multi-layer wiring board which comprises a substrate, a first resistor circuit comprising a thick film conductor and a thick film resistor, said first resistor circuit being provided on the substrate, a first insulating layer with through-holes being provided on the first resistor circuit, a second resistor circuit comprising a thick film conductor and a thick film resistor being provided on the first insulating layer and being connected to the first resistor circuit through said through-holes, an improvement which comprises forming the first insulating layer of crystallized glass of BaO-ZnO-MgO-Al2O3-TiO2-SiO2-B2O3 system, crystallized at 850°C. or above, which crystallized glass is sparingly reactive to the binder glass of the resistor circuits, whereby rate of change of resistivity of the thick film resistor is reduced.