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Reaction vessel 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B01J-003/04
  • B01J-003/06
  • C01B-031/06
  • B30B-015/34
출원번호 US-0213897 (1980-12-08)
우선권정보 SE-0010512 (1979-12-20)
발명자 / 주소
  • von Platen Baltzar C. (Ystad SEX)
출원인 / 주소
  • F. D. International, Ltd. (London GB2 03)
인용정보 피인용 횟수 : 41  인용 특허 : 2

초록

The present invention relates to a reaction vessel adapted to withstand pressures and temperatures of the magnitude associated with the manufacture of diamond products and boron nitride (BN) and similar hard materials. The reaction vessel has an outer chamber or shell formed from steel and an inner

대표청구항

A reaction vessel for use in a high temperature, high pressure process for forming diamonds, diamond powder, boron nitride and similar substances, said reaction vessel including: an inner hollow housing defining a reaction chamber therein, an outer shell surrounding and supporting said inner housing

이 특허에 인용된 특허 (2)

  1. Sigurdsson ; Per Arne, Method of pressure treatments of materials.
  2. Elmgren Staffan (Helsingborg SW), Pressure furnace for treating products at high temperature and high pressure.

이 특허를 인용한 특허 (41)

  1. D'Evelyn, Mark P., Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride.
  2. Afimiwala, Kirsh; Zeng, Larry, Apparatus for processing materials at high temperatures and pressures.
  3. D'Evelyn, Mark Philip; Giddings, Robert Arthur; Sharifi, Fred; Dey, Subhrajit; Hong, Huicong; Kapp, Joseph Alexander; Khare, Ashok Kumar, Apparatus for processing materials in supercritical fluids and methods thereof.
  4. D'Evelyn,Mark Philip; Park,Dong Sil; Lou,Victor Lienkong; McNulty,Thomas Francis; Hong,Huicong, Apparatus for producing single crystal and quasi-single crystal, and associated method.
  5. Tado, Masashi, Extra high voltage generator.
  6. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William, Gallium-nitride-on-handle substrate materials and devices and method of manufacture.
  7. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William D., Gallium—nitride-on-handle substrate materials and devices and method of manufacture.
  8. Schmidt, Mathew; D'Evelyn, Mark P., High indium containing InGaN substrates for long wavelength optical devices.
  9. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  10. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  11. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  12. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  13. Pakalapati, Rajeev T.; D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  14. D'Evelyn, Mark P.; Kapp, Joseph A.; Lawrenson, John C., High pressure apparatus with stackable rings.
  15. D'Evelyn, Mark Philip; Narang, Kristi Jean; Giddings, Robert Arthur; Tysoe, Steven Alfred; Lucek, John William; Vagarali, Suresh Shankarappa; Leonelli, Jr., Robert Vincent; Dysart, Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
  16. D'Evelyn,Mark Philip; Narang,Kristi Jean; Giddings,Robert Arthur; Tysoe,Steven Alfred; Lucek,John William; Vagarali,Suresh Shankarappa; Leonelli, Jr.,Robert Vincent; Dysart,Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
  17. D'Evelyn, Mark P.; Speck, James S.; Kamber, Derrick S.; Pocius, Douglas W., Large area nitride crystal and method for making it.
  18. D'Evelyn, Mark P.; Poblenz, Christiane; Krames, Michael R., Method for growth of indium-containing nitride films.
  19. D'Evelyn, Mark P.; Speck, James S., Method for synthesis of high quality large area bulk gallium based crystals.
  20. Sung, Chien Min, Method of applying high pressures to a high pressure assembly.
  21. Krames, Mike; D'Evelyn, Mark; Pakalapati, Rajeev; Alexander, Alex; Kamber, Derrick, Method of making bulk InGaN substrates and devices thereon.
  22. Degawa Junji (Hyogo JPX) Tsuji Kazuwo (Hyogo JPX), Method of manufacturing cubic boron nitride p-n junction body.
  23. D'Evelyn, Mark P.; Sharma, Rajat, Microcavity light emitting diode method of manufacture.
  24. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
  25. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
  26. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M., Photonic-crystal light emitting diode and method of manufacture.
  27. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M.; Feezell, Daniel F., Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors.
  28. D'Evelyn, Mark P., Polycrystalline group III metal nitride with getter and method of making.
  29. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  30. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  31. D'Evelyn, Mark P., Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer.
  32. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  33. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  34. D'Evelyn, Mark P., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  35. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  36. D'Evelyn, Mark P., Semi-insulating group III metal nitride and method of manufacture.
  37. Sharma, Rajat; Hall, Eric M.; Poblenz, Christiane; D'Evelyn, Mark P., Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods.
  38. Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P., Transparent group III metal nitride and method of manufacture.
  39. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  40. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  41. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
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