초록 ▼

A first metal surface of a first article of metal, such as the metalization layer on a silicon semiconductor device, is bonded to an opposing or second metal surface of a second article of metal, such as a “structured copper”strain buffer, using an improved method of thermo-compression diffusion bon

A first metal surface of a first article of metal, such as the metalization layer on a silicon semiconductor device, is bonded to an opposing or second metal surface of a second article of metal, such as a “structured copper”strain buffer, using an improved method of thermo-compression diffusion bonding that involves temperature control independent of compressional force control, whereby a superior bond is obtained.

대표청구항 ▼

An improved method of thermo-compression diffusion bonding a first metal surface of a first article of metal to a second metal surface of a second article of metal, said second article of metal comprising a metalized layer on a semiconductor device, the improved method comprising the steps of: (a) e

An improved method of thermo-compression diffusion bonding a first metal surface of a first article of metal to a second metal surface of a second article of metal, said second article of metal comprising a metalized layer on a semiconductor device, the improved method comprising the steps of: (a) exposing said first and second metal surfaces to an inert atmosphere; (b) heating said first and second articles of metal to a desired maximum temperature for thermo-compression diffusion bonding; (c) pressing together said first and second metal surfaces to a desired maximum pressure, said pressing together occurring only after said first and second articles of metal have reached substantially said desired maximum temperature; and (d) cooling from substantially said desired maximum temperature said first and second articles of metal, said cooling step occurring independently of said pressing together step.