초록 ▼

A process for preparing high purity silicon metal from Na2SiF6 (sodium fluosilicate). The sodium fluosilicate is heated to decomposition temperature to form NaF, which retains most of the impurities, and gaseous SiF4. The SiF4 is then reduced by the bomb reduction method using a reductant having a l

A process for preparing high purity silicon metal from Na2SiF6 (sodium fluosilicate). The sodium fluosilicate is heated to decomposition temperature to form NaF, which retains most of the impurities, and gaseous SiF4. The SiF4 is then reduced by the bomb reduction method using a reductant having a low packing density.

대표청구항 ▼

A process for preparing high purity silicon from Na2SiF6 comprising: heating the Na2SiF6 to decomposition temperature to form NaF and gaseous SiF4, whereby most impurities remain with the NaF, feeding the gaseous SiF4 into the cavity of a reduction bomb containing a suitable reductant to form a reac

A process for preparing high purity silicon from Na2SiF6 comprising: heating the Na2SiF6 to decomposition temperature to form NaF and gaseous SiF4, whereby most impurities remain with the NaF, feeding the gaseous SiF4 into the cavity of a reduction bomb containing a suitable reductant to form a reaction mixture, the reductant being in a physical form having a packing density from about 0.1 gm/cc to about 0.3 gm/cc, and being dispersed throughout the bomb cavity, igniting the reaction mixture to react the SiF4 with the reductant to form silicon and a slag, and recovering the silicon.