초록

A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.

대표청구항 ▼

A process for preparing a semiconductor device, comprising: forming a first aluminum-containing wiring layer on a main surface of a semiconductor substrate; forming a nitride film on said electric conductive layer by a chemical vapor deposition; forming an oxygen-containing layer on the entire surfa

A process for preparing a semiconductor device, comprising: forming a first aluminum-containing wiring layer on a main surface of a semiconductor substrate; forming a nitride film on said electric conductive layer by a chemical vapor deposition; forming an oxygen-containing layer on the entire surface of said nitride film to prevent reaction of said nitride film with a second aluminum-containing wiring film to be subsequently applied to the oxygen-containing layer; and forming a second aluminum-containing film on and in contact with said oxygen-containing layer, said oxygen-containing layer preventing short-circuiting of the first and second aluminum-containing wiring layers through the nitride film.