$\require{mediawiki-texvc}$
  • 검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
  • 검색연산자
검색도움말
검색연산자 기능 검색시 예
() 우선순위가 가장 높은 연산자 예1) (나노 (기계 | machine))
공백 두 개의 검색어(식)을 모두 포함하고 있는 문서 검색 예1) (나노 기계)
예2) 나노 장영실
| 두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색 예1) (줄기세포 | 면역)
예2) 줄기세포 | 장영실
! NOT 이후에 있는 검색어가 포함된 문서는 제외 예1) (황금 !백금)
예2) !image
* 검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색 예) semi*
"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"

통합검색

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

특허 상세정보

Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C23C-015/00   
미국특허분류(USC) 148/315 ; 148/39 ; 204/192N ; 427/38
출원번호 US-0390716 (1982-06-21)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 75  인용 특허 : 1
초록

The present invention pertains to steel articles having improved wear and friction properties and the method of producing these articles. A steel surface containing relatively high levels of nitrogen and having a surface film containing carbon is implanted with high energy ions. Overlapping layers enriched in carbon and nitrogen are formed beneath the surface and provide the steel with a surface that has improved wear and friction characteristics.

대표
청구항

A steel member having a low friction, high wear resistance surface layer formed by the process comprising the steps of: diffusing nitrogen into said surface by thermal means; forming an oxygen containing film; forming a carbon containing film on said surface; then implanting nitrogen into said surface using accelerating beam voltages between about 10 and 400 KeV in a vacuum of about 10-4 to 10-3 Pa until a fluence of about 0.5×1017 to 2×1017 nitrogen ions/cm2 is achieved; and wherein said implanting of nitrogen results in implanting carbon and oxygen int...

이 특허를 인용한 특허 피인용횟수: 75

  1. Conroy, Paul J.; Garner, James M.; Leveritt, Charles. Article with enhanced resistance to thermochemical erosion, and method for its manufacture. USP2010017650710.
  2. Henley Francois J. ; Cheung Nathan W.. Cleaved silicon thin film with rough surface. USP2001096294814.
  3. Francois J. Henley ; Michael A. Brayan ; William G. En. Cleaving process to fabricate multilayered substrates using low implantation doses. USP2002126500732.
  4. Henley,Francois J.; Bryan,Michael A.; En,William G.. Cleaving process to fabricate multilayered substrates using low implantation doses. USP2006067056808.
  5. Henley Francois J. ; Cheung Nathan W.. Controlled cleaning process. USP2000016013563.
  6. Francois J. Henley ; Nathan Cheung. Controlled cleavage process and device for patterned films. USP2002076413837.
  7. Henley Francois J. ; Cheung Nathan. Controlled cleavage process and device for patterned films. USP1999115985742.
  8. Henley, Francois J.; Cheung, Nathan. Controlled cleavage process and device for patterned films. USP2003036528391.
  9. Francois J. Henley ; Nathan W. Cheung. Controlled cleavage process and resulting device using beta annealing. USP2002106458672.
  10. Henley Francois J. ; Cheung Nathan W.. Controlled cleavage process and resulting device using beta annealing. USP2000126162705.
  11. Henley Francois J. ; Cheung Nathan. Controlled cleavage process using pressurized fluid. USP1999115994207.
  12. Henley, Francois J.; Cheung, Nathan. Controlled cleavage process using pressurized fluid. USP2003016511899.
  13. Henley Francois J. ; Cheung Nathan. Controlled cleavage system using pressurized fluid. USP2000126155909.
  14. Henley Francois J. ; Cheung Nathan W.. Controlled cleavage thin film separation process using a reusable substrate. USP2000126159825.
  15. Henley, Francois J.; Cheung, Nathan W.. Controlled cleaving process. USP2003106632724.
  16. Henley,Francois J.; Cheung,Nathan W.. Controlled cleaving process. USP2008057371660.
  17. Henley,Francois J.; Cheung,Nathan W.. Controlled cleaving process. USP2007017160790.
  18. Henley, Francois J.; Cheung, Nathan W.. Controlled process and resulting device. USP2010127846818.
  19. Henley, Francois J.; Cheung, Nathan W.. Controlled process and resulting device. USP2010077759217.
  20. Henley, Francois J.; Cheung, Nathan W.. Controlled process and resulting device. USP2010087776717.
  21. Henley,Francois J.; Cheung,Nathan W.. Controlled process and resulting device. USP2008087410887.
  22. Henley Francois J. ; Cheung Nathan. Device for patterned films. USP2001026187110.
  23. Henley Francois J. ; Cheung Nathan W.. Economical silicon-on-silicon hybrid wafer assembly. USP2001066245161.
  24. Yamaguchi, Shizuka; Baba, Noboru; Nagayama, Toshiaki; Terakado, Katsuyoshi; Kagiyama, Arata; Machimura, Hideki; Yamada, Hiroyuki; Takahashi, Yukio; Kotaki, Masayoshi; Ojima, Kazuo. Fuel pump and direct fuel injection engine. USP2005036860255.
  25. Nathan W. Cheung ; Francois J. Henley. Generic layer transfer methodology by controlled cleavage process. USP2002056391740.
  26. Henley, Francois J.; Cheung, Nathan W.. Gettering technique for wafers made using a controlled cleaving process. USP2005056890838.
  27. Henley, Francois J.; Cheung, Nathan W.. Gettering technique for wafers made using a controlled cleaving process. USP2003046548382.
  28. Joly, Jean-Pierre; Ulmer, Laurent; Parat, Guy. Integrated circuit on high performance chip. USP2011118048766.
  29. Hattori Torao (Saitama JPX) Takagi Yasushi (Kanagawa JPX) Tange Akira (Kanagawa JPX) Umetsu Chiharu (Kanagawa JPX) Kudo Osamu (Kanagawa JPX) Kurimoto Kiyoshi (Kanagawa JPX) Kitamura Rou (Kanagawa JPX. Laminated metallic belt for torque transmission device and method of manufacture thereof. USP1987104698050.
  30. Henley, Francois J.. Layer transfer of films utilizing controlled propagation. USP2012108293619.
  31. Henley, Francois J.. Layer transfer of films utilizing controlled shear region. USP2016069362439.
  32. Francois J. Henley ; Nathan W. Cheung. Method and device for controlled cleaving process. USP2002116486041.
  33. Henley Francois J. ; Cheung Nathan. Method and device for controlled cleaving process. USP2001096291313.
  34. Henley Francois J. ; Cheung Nathan W.. Method and device for controlled cleaving process. USP2001096284631.
  35. Henley, Francois J.; Cheung, Nathan W.. Method and device for controlled cleaving process. USP2004096790747.
  36. Henley,Francois J.; Cheung,Nathan. Method and device for controlled cleaving process. USP2008037348258.
  37. Henley, Francois J.. Method and structure for fabricating solar cells using a thick layer transfer process. USP2010107811900.
  38. Fournel, Franck; Moriceau, Hubert; Lagahe, Christelle. Method for making a stressed structure designed to be dissociated. USP2013038389379.
  39. Tauzin, Aurélie; Dechamp, Jérôme; Mazen, Frédéric; Madeira, Florence. Method for preparing thin GaN layers by implantation and recycling of a starting substrate. USP2014078778775.
  40. Hahn Granville (Big Spring TX). Method for retarding mineral buildup in downhole pumps. USP1991024990233.
  41. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle; Bourdelle, Konstantin; Tauzin, Aurélie; Fournel, Franck. Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation. USP2012118309431.
  42. Mori Hirotaro (Suita JPX) Fujita Hiroshi (Ibaraki JPX). Method of controlling supersaturated injection and concentration of exotic atoms into deep portions of a solid with a hi. USP1987064670291.
  43. Aspar, Bernard; Bruel, Michel; Poumeyrol, Thierry. Method of producing a thin layer of semiconductor material. USP2012018101503.
  44. Cheung Nathan W. ; Lu Xiang ; Hu Chenming. Method of separating films from bulk substrates by plasma immersion ion implantation. USP2000026027988.
  45. Deguet, Chrystel; Clavelier, Laurent; Dechamp, Jerome. Method of transferring a thin film onto a support. USP2012038142593.
  46. Fournel, Franck. Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer. USP2012088252663.
  47. Malik, Shamim M.; Claude, Charles D.; Hossainy, Syed F. A.. Modified implantable device surface and a method of making the same. USP2012028123799.
  48. Malik, Igor J.; Kang, Sien G.; Fuerfanger, Martin; Kirk, Harry; Flat, Ariel; Current, Michael Ira; Ong, Philip James. Non-contact etch annealing of strained layers. USP2012058187377.
  49. Bryan Michael A. ; Kai James K.. Nozzle for cleaving substrates. USP2001076263941.
  50. Bryan, Michael A.; Kai, James K.. Nozzle for cleaving substrates. USP2003026513564.
  51. Henley Francois J. ; Cheung Nathan W.. Pre-semiconductor process implant and post-process film separation. USP2001096291326.
  52. Henley Francois J. ; Cheung Nathan W.. Pressurized microbubble thin film separation process using a reusable substrate. USP2000116146979.
  53. Bruel,Michel. Process for the production of thin semiconductor material films. USP200702RE39484.
  54. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe. Process for the transfer of a thin film. USP2011027883994.
  55. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe. Process for the transfer of a thin film comprising an inclusion creation step. USP2013128609514.
  56. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe. Process for the transfer of a thin film comprising an inclusion creation step. USP2013068470712.
  57. Katoh, Jun; Hata, Hideo; Yamamoto, Kenji. Pulley for continuously variable transmission. USP2013098523722.
  58. Henley, Francois J.; Brailove, Adam. Race track configuration and method for wafering silicon solar substrates. USP2012128330126.
  59. Bruce D. Sartwell ; Paul M. Natishan. Reactive oxygen-assisted ion implantation into metals and products made therefrom. USP2002016335062.
  60. Henley Francois J. ; Cheung Nathan W.. Reusable substrate for thin film separation. USP2000016010579.
  61. Henley Francois J. ; Cheung Nathan W.. Silicon-on-silicon hybrid wafer assembly. USP2000046048411.
  62. Henley, Francois J.; Cheung, Nathan W.. Silicon-on-silicon hybrid wafer assembly. USP2003056558802.
  63. Henley Francois J. ; Cheung Nathan W.. Silicon-on-silicon wafer bonding process using a thin film blister-separation method. USP2000126159824.
  64. Moriceau, Hubert; Aspar, Bernard; Margail, Jacques. Stacked structure and production method thereof. USP2012068193069.
  65. Bryan Michael A. ; Kai James K.. Substrate cleaving tool and method. USP2001046221740.
  66. Bryan, Michael A.; Kai, James K.. Substrate cleaving tool and method. USP2003046554046.
  67. Henley, Francois; Lamm, Al; Chow, Yi-Lei. Substrate cleaving under controlled stress conditions. USP2016059356181.
  68. Henley, Francois; Lamm, Al; Chow, Yi-Lei. Substrate cleaving under controlled stress conditions. USP2017059640711.
  69. Henley, Francois; Lamm, Al; Chow, Yi-Lei. Substrate cleaving under controlled stress conditions. USP2015038993410.
  70. Dearnaley Geoffrey (Abingdon GB2). Surface treatment of metals. USP1986124629631.
  71. Brailove, Adam; Liu, Zuqin; Henley, Francois J.; Lamm, Albert J.. Techniques for forming thin films by implantation with reduced channeling. USP2012128329557.
  72. Malik, Shamim M.; Mukherjee, Avijit. TiNxCy modified surface for an implantable device and a method of producing the same. USP2014098834555.
  73. Malik, Shamim M.; Mukherjee, Avijit. TiNxCy modified surface for an implantable device and a method of producing the same. USP2013028382815.
  74. Malik, Shamim M.; Mukherjee, Avijit. TiNxOy Modified surface for an implantable device and a method of producing the same. USP2014108864818.
  75. Malik, Shamim M.; Mukherjee, Avijit. TiNxOy modified surface for an implantable device and a method of producing the same. USP2013068470019.