초록 ▼

A solid state image-sensing device which comprises an image-sensing area formed of a plurality of matrix-arranged cells exposed to an introduced image light and an optical black connected to a readout section in parallel relationship with the image-sensing area. An image light is prevented from ente

A solid state image-sensing device which comprises an image-sensing area formed of a plurality of matrix-arranged cells exposed to an introduced image light and an optical black connected to a readout section in parallel relationship with the image-sensing area. An image light is prevented from entering the optical black. Only noise charges (dark current charges) sent forth from the optical black are transferred to a control circuit. A gate electrode control signal for eliminating charges whose amount corresponds to that of the noise charges from the total charges collected in the storage regions of the matrix-arranged cells of the image-sensing area is produced by a control circuit. The gate electrode control signal is supplied to a gate electrode positioned between the photosensing section and vertical transfer section of the cells of the image-sensing area. A potential well lying under the gate electrode has its depth controlled by the gate electrode control signal. At first, a charge whose amount is substantially equal to that of a light-generated signal charge stored in the storage region of the image-sensing area is transferred to a vertical transfer section. After elimination of the noise charges, the remaining charges are returned at least once to the photosensing sections of the respective cells to be held in the storage regions of the photosensing sections of the cells for a prescribed length of time.

대표청구항 ▼

A solid state image-sensing device which comprises: (a) a group of matrix-arranged cells, each of which includes means for generating signal charges corresponding to the luminosity of an introduced light, means which forms a potential well and stores therein mixed charges consisting of the second ch

A solid state image-sensing device which comprises: (a) a group of matrix-arranged cells, each of which includes means for generating signal charges corresponding to the luminosity of an introduced light, means which forms a potential well and stores therein mixed charges consisting of the second charges produced by said signal charge-generating means and first unnecessary noise charges; (b) detection means for detecting the amount of said noise charges stored in said charge-storing means and issuing a first electrical signal corresponding to the detected amount of said first noise charges; (c) elimination means in response to said first electrical signal for eliminating said first noise charges detected by said detection means from the mixed charges stored in said charge-storing means; (d) readout means connected at least to said matrix-arranged cell group for reading out the amount of the remaining portion of the mixed charges after removal of the first charges which equals said second charges; and (e) each of said cells further including transfer means for transferring the remaining portion of the mixed charges stored in said potential well of said charge-storing means and gate means which is disposed between said charge-storing means and transfer means to form a second potential well and freely move the remaining portion of the mixed charges between said charge-storing means and transfer means by varying the depth of said second potential well. *** BRS DOCUMENT BOUNDARY ***