초록 ▼

The disclosed oxygen concentration detector includes at least one resistive body and at least one semiconductor whose resistance varies with oxygen partial pressure, and an alternating current of a specific frequency is applied to the resistive body so as to raise the temperature thereof, which resi

The disclosed oxygen concentration detector includes at least one resistive body and at least one semiconductor whose resistance varies with oxygen partial pressure, and an alternating current of a specific frequency is applied to the resistive body so as to raise the temperature thereof, which resistive body is adapted to heat the semiconductor.

대표청구항 ▼

An oxygen concentration detector for detecting oxygen concentration in gases, comprising: a semiconductor body whose electric resistance varies with oxygen partial pressure of an ambient atmosphere thereof, said semiconductor body being located between at least two separate electrode and said electr

An oxygen concentration detector for detecting oxygen concentration in gases, comprising: a semiconductor body whose electric resistance varies with oxygen partial pressure of an ambient atmosphere thereof, said semiconductor body being located between at least two separate electrode and said electrodes being in contact with said semiconductor body; a resistive body having a composition including a number of portions with a negative temperature coefficient of electric resistance and high-resistance substance layers separating said portions one from the other, at least two separate electrodes contacting said resistive body and having the resistive body located therebetween; an AC power source connected to said at least two separate electrodes contacting said resistive body, said AC power source applying an AC current to said resistive body so as to heat the resistive body, said AC power source being arranged to supply an AC voltage at a frequency sufficiently high that an impedance between said at least two electrodes to which AC voltage is applied is largely independent of interface capacitances between said electrodes to which AC voltage is applied and a surface of said resistive body, said resistive body being so related to said semiconductor that said semiconductor is heated by said resistive body upon application of said AC current; and means for measuring a resistance of the semiconductor body with variances of the oxygen partial pressure.