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A gas sensor is described which includes a layer of a sensitive material formed on an electric insulating substrate and spaced electrodes electrically connected to the layer. The layer is formed of a porous film of a uniform mixture which contains a p-type compound oxide semiconductor with a perovsk

A gas sensor is described which includes a layer of a sensitive material formed on an electric insulating substrate and spaced electrodes electrically connected to the layer. The layer is formed of a porous film of a uniform mixture which contains a p-type compound oxide semiconductor with a perovskite type of crystal structure as the major ingredient and one or more of vanadium, niobium, tantalum and/or compounds thereof as minor ingredients. The minor ingredients are contained in the layer in an amount of 0.01 to 5% by weight, based on the weight of the p-type compound oxide semiconductor, and are incorporated into the layer by diffusing them into the layer. The gas sensor exhibits a small change with time and a reduced tailing effect attendant on variations in the gas combustion. With this, it is possible to effect measurements, detection and control with a high reliability.

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In a gas sensor comprising a layer of a sensitive material formed on an electric insulative substrate and electrodes electrically connected to said layer of sensitive material, the improvement wherein said layer of sensitive material is formed of a porous film consisting of a uniform mixture which c

In a gas sensor comprising a layer of a sensitive material formed on an electric insulative substrate and electrodes electrically connected to said layer of sensitive material, the improvement wherein said layer of sensitive material is formed of a porous film consisting of a uniform mixture which contains a p-type compound oxide semiconductor with a perovskite type of crystal structure as the major ingredient and one or more materials selected from the group consisting of vanadium, niobium, tantalum and compounds thereof as minor ingredients, and wherein said layer of sensitive material has a thickness of 0.5 to 50 microns; said one or more materials selected from the group consisting of vanadium, niobium, tantalum and compounds thereof is contained in an amount of 0.01 to 5% by weight, based on the weight of the p-type compound semiconductor and is incorporated in the layer by diffusing said one or more materials selected from the group consisting of vanadium, niobium, tantalum and compounds thereof into the layer of said p-type compound oxide semiconductor; and said electrodes are electrically connected to said layer in remote relation to each other.