초록 ▼

This invention relates to a process for forming thin insulator films on conductive or semiconductive substrates in a gas plasma and more particularly relates to a process for the growth of such thin insulating films wherein the rate of insulator growth on one surface of a substrate is controlled by

This invention relates to a process for forming thin insulator films on conductive or semiconductive substrates in a gas plasma and more particularly relates to a process for the growth of such thin insulating films wherein the rate of insulator growth on one surface of a substrate is controlled by predepositing specific amounts of insulating films such as silicon dioxide or silicon nitride on the other surface of the substrate. Substrates with predeposited insulators form insulating films much more slowly in a gas plasma than bare substrates and, after an initial fast growth phase, the insulator thickness reaches a steady growth phase. Because of the resulting slower rate of insulator formation, control of the desired insulator thickness is easy and it is even easier if the desired insulator thickness is close to the steady growth phase.

대표청구항 ▼

A method for controlling the thickness of plasma formed insulators on the surface of a substrate having first and second surfaces comprising the step of: forming a first insulator layer on said first surface of said substrate said first layer having a predetermined thickness, depositing on said seco

A method for controlling the thickness of plasma formed insulators on the surface of a substrate having first and second surfaces comprising the step of: forming a first insulator layer on said first surface of said substrate said first layer having a predetermined thickness, depositing on said second surface from a gas plasma a second insulator layer the thickness of which for a given time period decreases as said predetermined thickness of said first layer increases.