초록 ▼

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

대표청구항 ▼

A method of forming a shaped product having a surface layer of silicon carbide (SiC) reaction bonded to an inner structure consisting essentially of carbon, comprising the steps of: (a) generating SiO gas at a concentration of between about 5 and 50 volume percent by heating solid silicon dioxide (S

A method of forming a shaped product having a surface layer of silicon carbide (SiC) reaction bonded to an inner structure consisting essentially of carbon, comprising the steps of: (a) generating SiO gas at a concentration of between about 5 and 50 volume percent by heating solid silicon dioxide (SiO2) to a reaction temperature of between approximately 1500°and 1550°C. in an atmosphere of hydrogen, said solid silicon dioxide being in the form of a powder surrounding said structure: (b) contacting said structure with said SiO gas at said reaction temperature of between approximately 1500°C. and 1550°C. for a period of time sufficient to form a layer of SiC on the surface of said structure by chemical conversion of carbon in said structure to SiC, whereby a layer of reaction-bonded SiC is formed on the surface of said structure without significantly changing the dimensions of said structure.