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A novel thin ribbon wafer of semiconductor having a polycrystalline structure composed of more than 50% of a grain having a grain size of more than 5 mm

A novel thin ribbon wafer of semiconductor having a polycrystalline structure composed of more than 50% of a grain having a grain size of more than 5 mm

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A method of manufacturing a thin ribbon of semiconductor material, comprising: preparing a material essentially consisting of silicon of more than 90 atomic % with less than 10 atomic % of at least one additional element, for improving the properties of a semiconductor, said additional elements bein

A method of manufacturing a thin ribbon of semiconductor material, comprising: preparing a material essentially consisting of silicon of more than 90 atomic % with less than 10 atomic % of at least one additional element, for improving the properties of a semiconductor, said additional elements being selected from the group consisting of phosphorus, sulfur, boron, arsenic, tellurium, tin, selenium, aluminum, gallium, indium, silver, and bismuth; and a mixture thereof; heating said semiconductor material to a melt; ejecting said melt through a nozzle under pressure from 0.01 to 1.5 atm. onto a moving surface of a cooling substrate to cool said melt at a cooling rate of 103-106°C./sec; forming a thin ribbon from the group consisting of p-type, i-type or n-type semiconductor material; whereby the thus obtained thin ribbon of semiconductor material has a polycrystalline structure composed of more than 50% of a grain having a grain size of more than 5 m5-200 m34 mm without breaking or cracking.