초록 ▼

A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first and s

A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first and second metal layers and the barrier layer in accordance with the first masking pattern, removing the first masking pattern, forming a second masking pattern on the second metal layer, etching the second metal layer in accordance with the second masking pattern, removing the second masking pattern, depositing a dielectric layer having a thickness sufficient to cover the second metal layer, etching the dielectric layer to expose the second metal layer, and depositing on the etched dielectric layer and exposed second metal layer a further metal layer to contact the exposed second metal layer.

대표청구항 ▼

1. A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first an

1. A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first and second metal layers and the barrier layer in accordance with the first masking pattern, removing the first masking pattern, forming a second masking pattern on the second metal layer, etching the second metal layer in accordance with the second masking pattern, removing the second masking pattern, depositing a dielectric layer having a thickness sufficient to cover the second metal layer, etching the dielectric layer to expose the second metal layer, and depositing on the etched dielectric layer and exposed second metal layer a further metal layer to contact the exposed second metal layer. 2. A method according to claim 1 wherein the method is selectively repeated until the further metal layer comprises the final metal layer of the layered structure. 3. A method according to claim 1 wherein the further metal layer comprises the final metal layer of the layered structure. 4. A method according to claim 2 wherein a final masking pattern is formed on the final metal layer and the final metal layer is etched in accordance with the final masking pattern to remove unwanted metal therefrom. 5. A method according to claim 4 wherein the layers are etched by anisotropic plasma etching. 6. A method according to claim 5 wherein the metal layers are etched by carbon tetrachloride plasma etching. 7. A method according to claim 5 wherein the barrier layer is etched by carbon tetrachloride and oxygen plasma etching. 8. A method according to claim 4 wherein the metal layers comprise aluminium. 9. A method according to claim 4 wherein the dielectric comprises polyimide. 10. A method according to claim 4 wherein the barrier layer comprises chromium.