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SSICM guidance and control concept

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) F41G-007/22   
미국특허분류(USC) 244/003.15
출원번호 US-0521490 (1983-08-08)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Raubitschek, John H.Bellamy, Werten F. W.Sims, Robert C.
인용정보 피인용 횟수 : 32  인용 특허 : 1
초록

The guidance scheme utilizes wide beam width semi-active RF sensors, a prsion roll altitude reference, and a controlled grade pitch, yaw and roll rate gyros to deliver high quality homing guidance information to a spin stabilized controlled missile. A filtering system is utilized to eliminate errors caused by body roll signals generated due to the spin of the missiles. The nutational motion is used to calibrate the sensors. Impulsive maneuvers are utilized to intercept incoming ballistic targets.

대표
청구항
▼

1. In a missile guidance system for guiding a spin stabilized controlled missile towards a target by proportional navigation, the improvement comprising the method of utilizing fixed body mounted sensors for detecting the relative direction of the target and producing an output signal proportional thereto; generating a rate signal which is proportional to body angle rates of the missile; utilizing filters to separate body motions from target motions in the rate signal; producing a filtered rate signal proportional to the body angle rates; combining the f...

이 특허에 인용된 특허 (1)

  1. Gulick Joseph F. (Clarksville MD) Miller James S. (Columbia MD) Pue Alan J. (Columbia MD). Broadband interferometer and direction finding missile guidance system. USP1980054204655.

이 특허를 인용한 특허 피인용횟수: 32

  1. Ahn, Kie Y.; Forbes, Leonard. Atomic layer deposited hafnium tantalum oxide dielectrics. USP2009077560395.
  2. Gustafson Donald E. ; Lucia David J.. Autonomous local vertical determination apparatus and methods for a ballistic body. USP1999035886257.
  3. Ahn, Kie Y.; Forbes, Leonard. Conductive layers for hafnium silicon oxynitride. USP2014078785312.
  4. Ahn, Kie Y.; Forbes, Leonard. Conductive layers for hafnium silicon oxynitride films. USP2010057709402.
  5. Ahn, Kie Y.; Forbes, Leonard. Conductive layers for hafnium silicon oxynitride films. USP2011118067794.
  6. Schwarzkopf Gerhart (Uhldingen-Mhlhofen DEX) Dulat Bernd (Uberlingen/Bodensee DEX). Device for measuring the roll rate or roll attitude of a missile. USP1988124790493.
  7. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Dielectrics containing at least one of a refractory metal or a non-refractory metal. USP2014078772851.
  8. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Dielectrics containing at least one of a refractory metal or a non-refractory metal. USP2015028951880.
  9. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Dielectrics containing at least one of a refractory metal or a non-refractory metal. USP2013108557672.
  10. Hasson, Joseph; Goldner, Galya. Exo atmospheric intercepting system and method. USP2010097791006.
  11. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Hafnium lanthanide oxynitride films. USP2009077563730.
  12. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Hafnium lanthanide oxynitride films. USP2011087989362.
  13. Ahn, Kie Y.; Forbes, Leonard. Hafnium tantalum oxide dielectrics. USP2009107602030.
  14. Ahn, Kie Y.; Forbes, Leonard. Hafnium tantalum oxide dielectrics. USP2012108278225.
  15. Ahn, Kie Y.; Forbes, Leonard. Hafnium tantalum oxide dielectrics. USP2013098524618.
  16. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Hafnium tantalum oxynitride dielectric. USP2013068466016.
  17. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Hafnium tantalum oxynitride dielectric. USP2014068759170.
  18. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Hafnium tantalum oxynitride high-k dielectric and metal gates. USP2009107605030.
  19. Ahn, Kie Y.; Forbes, Leonard. Lanthanum aluminum oxynitride dielectric films. USP2009057531869.
  20. Ahn,Kie Y.; Forbes,Leonard. Lanthanum aluminum oxynitride dielectric films. USP2008087410910.
  21. Ahn,Kie Y.; Forbes,Leonard. Lanthanum hafnium oxide dielectrics. USP2008087411237.
  22. Cloutier James R.. Proportional Guidance (PROGUIDE) and Augmented Proportional Guidance (Augmented PROGUIDE). USP2000056064332.
  23. Preston, Kenneth G.; Leal, Michael A.; Wilson, Rondell J.; Hussey, Richard C.. Propulsion and maneuvering system with axial thrusters and method for axial divert attitude and control. USP2014058735788.
  24. Klaus ; Jr. Benjamin (Lexington MA). Seeker. USP1990114973013.
  25. Forbes,Leonard; Ahn,Kie Y.; Bhattacharyya,Arup. Silicon lanthanide oxynitride films. USP2008107432548.
  26. Grosso Vincent A. (Hopkinton MA) Fitzgerald Robert J. (Wayland MA) DeFonzo Richard J. (Northboro MA). Strap down roll reference. USP1987064676456.
  27. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Tantalum aluminum oxynitride high-K dielectric. USP2012028114763.
  28. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Tantalum aluminum oxynitride high-κ dielectric. USP2010077759747.
  29. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Tantalum lanthanide oxynitride films. USP2009067544604.
  30. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Tantalum silicon oxynitride high-K dielectrics and metal gates. USP2013088519466.
  31. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Tantalum silicon oxynitride high-K dielectrics and metal gates. USP2012058168502.
  32. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup. Tantalum silicon oxynitride high-k dielectrics and metal gates. USP2010087776765.

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