Common-gate GaAs FET design for monolithic microwave integrated circuits
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/02
H01L-029/80
출원번호
US-0395416
(1982-07-06)
발명자
/ 주소
Brehm, Gailon E.
Lehmann, Randall E.
출원인 / 주소
Texas Instruments Incorporated
대리인 / 주소
Groover, III, RobertComfort, James T.Sharp, Melvin
인용정보
피인용 횟수 :
10인용 특허 :
1
초록▼
In order to provide low and exactly repeatable common lead inductance (gate lead inductance) and low feedback parasitics in a common-gate low noise amplifier, a GaAs FET connects the gate electrode to ground at various points along its width by means of an air bridge crossover structure. This struct
In order to provide low and exactly repeatable common lead inductance (gate lead inductance) and low feedback parasitics in a common-gate low noise amplifier, a GaAs FET connects the gate electrode to ground at various points along its width by means of an air bridge crossover structure. This structure crosses over the input (source) lines with very low capacitance. Since the gate lead inductance is low in this design, and because in monolithic form this inductance does not vary as is the case for a device grounded using bond wires, common-gate circuit stability is assured. This device preferably uses the well-known pi-gate configuration to provide low drain-gate parasitic capacitance and equal phasing to all parts of the device.
대표청구항▼
1. A monolithic common-gate active device, comprising: a gate, said gate comprising a stripe of metal having a lesser dimension of less than one and one half microns and a greater dimension which is more than 100 microns; a plurality of source regions, said source regions being positioned parall
1. A monolithic common-gate active device, comprising: a gate, said gate comprising a stripe of metal having a lesser dimension of less than one and one half microns and a greater dimension which is more than 100 microns; a plurality of source regions, said source regions being positioned parallel, adjacent to, and separated from said gate, all of said plurality of source regions being commonly fed; a drain region, said drain region being parallel, adjacent to, and separated from said gate, said source and drain regions lying on opposite sides of said gate; said plurality of source regions being fed by respective source feed, all of said source feeds being connected together in common; a gate pad, said gate pad being connected to said gate and being positioned within the area defined by said plurality of source feeds; a ground contact; and an air bridge connecting said gate pad over at least one of said source feeds to said ground contact. 2. A monolithic common-gate active device, comprising: a gate, said gate comprising a stripe of metal having a lesser dimension of less than one and one half microns and a greater dimension which is more than 100 microns; a plurality of drain regions, said drain regions being positioned parallel, adjacent to, and separated from said gate, all of said plurality of drain regions being commonly fed; a source region, said source region being parallel, adjacent to, and separated from said gate, said drain and source regions lying on opposite sides of said gate; said plurality of drain regions being fed by respective drain feeds, all of said drain feeds being connected together in common; a gate pad, said gate pad being connected to said gate and being positioned within the area defined by said plurality of drain feeds; a ground contact; and an air bridge connecting said gate pad over at least one of said drain feeds to said ground contact. 3. The device of claim 1 or 2, further comprising additional contacts to said gate near the ends of said gate, said additional contacts also being connected to said ground contact. 4. The device of claim 1, wherein said drain is connected by multiple separate leads to a drain feed, said multiple separate leads being spaced along the length of said drain. 5. The device of claim 2, wherein said source is connected by multiple separate leads to a source feed, said multiple separate leads being spaced along the length of said source. 6. The device of claim 1, 2, 4, or 5, wherein said gate lies on a semiconducting substrate. 7. The device of claim 6, wherein said semiconducting substrate is gallium arsenide. 8. A monolithic common-gate active device, comprising: a gate, said gate comprising a stripe of metal having a lesser dimension of less than one and one-half microns and a greater dimension which is more than 100 microns; a plurality of source regions, said source regions being positioned parallel, adjacent to, and separated from one side of said gate stripe, all of said plurality of source regions being commonly fed; a drain region, said drain region being parallel, adjacent to, and separated from said gate, said source and drain regions lying on opposite sides of said gate; said plurality of source regions being fed by respective source feeds, all of said source feeds being connected together in common; a gate pad, said gate pad being connected to said gate stripe and being positioned within the area defined by said plurality of source feeds adjacent to one side of said gate stripe; a ground contact; and an air bridge connecting said gate pad over at least one of said source feeds to said ground contact. 9. A monolithic common-gate active device, comprising: a gate, said gate comprising a stripe of metal having a lesser dimension of less than one and one-half microns and a greater dimension which is more than 100 microns; a plurality of drain regions, said drain regions being positioned parallel, adjacent to, and separated from one side of said gate stripe, all of said plurality of drain region being commonly fed; a source region, said source region being parallel, adjacent to, and separated from said gate, said drain and source regions lying on opposite sides of said gate; said plurality of drain regions being fed by respective drain feeds, all of said drain feeds being connected together in common; a gate pad, said gate pad being connected to said gate stripe and being positioned within the area defined by said plurality of drain feeds adjacent to one side of said gate stripe; a ground contact; and an air bridge connecting said gate pad over at least one of said drain feeds to said ground contact. 10. The device of claim 8, further comprising additional contacts to said gate near the ends of said gate, said additional contacts also being connected to said ground contact. 11. The device of claim 9, further comprising additional contacts to said gate near the ends of said gate, said additional contacts also being connected to said ground contact. 12. The device of claim 8, wherein said drain is connected by multiple separate leads to a drain feed, said multiple separate leads being spaced along the length of said drain. 13. The device of claim 9, wherein said source is connected by multiple separate leads to a source feed, said multiple separate leads being spaced along the length of said source. 14. The device of claim 8 or claim 9, wherein said gate lies on a semiconducting substrate. 15. The device of claim 14, wherein said semiconducting substrate is gallium arsenide.
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이 특허에 인용된 특허 (1)
Yoder, Max N., Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect.
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