IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0501201
(1983-06-06)
|
우선권정보 |
JP-0098089 (1982-06-08); JP-0098090 (1982-06-08); JP-0123865 (1982-07-16); JP-0123866 (1982-07-16); JP-0194286 (1982-11-05) |
발명자
/ 주소 |
- Suzuki, Masayoshi
- Saigo, Kazuhide
|
출원인 / 주소 |
|
대리인 / 주소 |
Burns, Doane, Swecker and Mathis
|
인용정보 |
피인용 횟수 :
9 인용 특허 :
5 |
초록
▼
A method of forming fine patterns in the manufacture of microelectronic devices by using optical or electron-beam lithography and a dry etching technique such as reactive sputter etching with oxygen. The substrate surface is covered with a relatively thick organic layer, and a thin resist film is fo
A method of forming fine patterns in the manufacture of microelectronic devices by using optical or electron-beam lithography and a dry etching technique such as reactive sputter etching with oxygen. The substrate surface is covered with a relatively thick organic layer, and a thin resist film is formed thereon. The material of the resist layer is a polymer or copolymer comprising trialkylsilyl group, dimethylphenylsilyl group or trialkoxysilyl group. The thickness of the resist film is so adjusted as to contain a sufficient number of trialkylsilyl, dimethylphenylsilyl or trialkoxysilyl groups per unit area of the resist pattern to thereby ensure high endurance of the resist to dry etching for etching the thick organic layer.
대표청구항
▼
1. A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate to ultimately be etched; forming a resist film directly on said organic polymer layer, the materi
1. A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate to ultimately be etched; forming a resist film directly on said organic polymer layer, the material of said resist film being a polymer comprising a trialkylsilyl group and being formed by using a monomer selected from the group consisting of monomers of formula (I), monomers of formula (II), and monomers of formula (III), and forming a desired pattern in said resist film by using a lithography technique such that the number of said substituted silyl groups in the patterned resist film is at least 1×10 16 per 1 cm 2 ; etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask; and etching said substrate with the unetched areas of said organic polymer layer as a mask; wherein formula (I) is: ##STR## where R represents a lower alkyl group, and R' represents a hydrogen atom or a lower alkyl group. 2. A method according to claim 1, wherein the material of said resist film is poly(trialkylsilylstyrene). 3. A method according to claim 2, wherein said poly(trialkylsilylstyrene) is selected from the group consisting of poly(trimethylsilylstyrene) and poly(triethylsilylstyrene). 4. A method according to claim 1, wherein the material of said resist film is a copolymer of trialkylsilylstyrene with an ethylenic unsaturated monomer not having said substituted silyl group. 5. A method according to claim 4, wherein said ethylenic unsaturated monomer is selected from the group consisting of chloromethylstyrene and glycidyl methacrylate. 6. A method according to claim 5, wherein said trialkylsilylstyrene is trimethylsilylstyrene. 7. A method according to claim 1, wherein the material of said resist film is a copolymer of trimethylallylsilane with another monomer selected from the group consisting of diallyl phthalate and diallyl terephthalate. 8. A method according to claim 1, wherein the material of said resist film is poly(2-trimethylsiloxyethyl methacrylate). 9. A method according to claim 1, wherein the material of said resist film is a copolymer of 2-trimethylsiloxyethyl methacrylate with an ethylenic unsaturated monomer not having said substituted silyl group. 10. A method according to claim 9, wherein said ethylenic unsaturated monomer is methyl methacrylate. 11. A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate to ultimately be etched; forming a resist film directly on said organic polymer layer, the material of said resist film being a polymer comprising a trialkoxysilyl group and being formed by using a monomer of ##STR## where R represents a lower alkyl group, and R 3 represents a hydrogen atom or a lower alkyl group, and forming a desired pattern in said resist film by using a lithography technique such that the number of said substituted silyl groups in the patterned resist film is at least 1×10 16 per 1 cm 2 ; etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask; and etching said substrate with the unetched areas of said organic polymer layer as a mask. 12. A method according to claim 11, wherein the material of said resist film is a copolymer of 3-trimethoxysilylpropyl methacrylate with an ethylenic unsaturated monomer not having said substituted silyl group. 13. A method according to claim 12, wherein said ethylenic unsaturated monomer is glycidyl methacrylate. 14. A method according to claim 1, wherein said dry etching technique is reactive sputter etching using oxygen gas. 15. A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate to ultimately be etched; forming a resist film directly on said organic polymer layer, the material of said resist film being poly(dimethylphenyl silylstyrene), and forming a desired pattern in said resist film by using a lithography technique such that the number of said substituted silyl groups in the patterned resist film is at least 1×10 16 per 1 cm 2 ; etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask; and etching said substrate with the unetched areas of said organic polymer layer as a mask. 16. A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate to ultimately be etched; forming a resist film directly on said organic polymer layer, the material of said resist film being a copolymer of dimethylphenylsilylstyrene with an ethylenic unsaturated monomer not having said substituted silyl group, and forming a desired pattern in said resist film by using a lithography technique such that the number of said substituted silyl groups in the patterned resist film is at least 1×10 16 per 1 cm 2 ; etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask; and etching said substrate with the unetched areas of said organic polymer layer as a mask. 17. A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate to ultimately be etched; forming a resist film directly on said organic polymer layer, the material of said resist film being a trimethylsilyl-substituted phenolic resin of novolak type comprising a structural unit ##STR## and another structural unit ##STR## and forming a desired pattern in said resist film by using a lithography technique such that the number of said substituted silyl groups in the patterned resist film is at least 1×10 16 per 1 cm 2 ; etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask; and etching said substrate with the unetched areas of said organic polymer layer as a mask. 18. A method according to claim 17, wherein said dry etching technique is reactive sputter etching using oxygen gas. 19. A method according to claim 15, wherein said dry etching technique is reactive sputter etching using oxygen gas. 20. A method according to claim 16, wherein said dry etching technique is reactive sputter etching using oxygen gas. 21. A method according to claim 11, wherein said dry etching technique is reactive sputter etching using oxygen gas.
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