Monolithic infrared ray charge transfer element
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0548755
(1983-11-04)
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우선권정보 |
JP-0195441 (1982-11-06) |
발명자
/ 주소 |
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출원인 / 주소 |
- Mitsubishi Denki Kabushiki Kaisha
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대리인 / 주소 |
Sughrue, Mion, Zinn, Macpeak & Seas
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인용정보 |
피인용 횟수 :
6 인용 특허 :
5 |
초록
▼
A monolithic infrared ray charge transfer element suitable for use in the 8 to 14 μm wavelength range, having improved response characteristics, and which is easily fabricated. A charge transfer element is formed on a semiconductor substrate and a semiconductor layer formed on the substrate. An infr
A monolithic infrared ray charge transfer element suitable for use in the 8 to 14 μm wavelength range, having improved response characteristics, and which is easily fabricated. A charge transfer element is formed on a semiconductor substrate and a semiconductor layer formed on the substrate. An infrared ray detecting element is formed upon the semiconductor layer using a different semiconductor material from that of the semiconductor layer. Preferably, the substrate and semiconductor layer are formed of gallium arsenide and the infrared ray detecting element of mercury cadmium telluride or lead tin telluride.
대표청구항
▼
1. A monolithic infrared ray charge transfer element comprising: a semiconductor substrate, a semiconductor layer formed on said semiconductor substrate, a charge transfer element consisting of Schottky barrier transfer gates formed directly on a first area of said semconductor layer, signal line co
1. A monolithic infrared ray charge transfer element comprising: a semiconductor substrate, a semiconductor layer formed on said semiconductor substrate, a charge transfer element consisting of Schottky barrier transfer gates formed directly on a first area of said semconductor layer, signal line conductors contacting said gates, and an infrared detector element directly formed on a second area of said semiconductor layer; wherein said semiconductor layer is formed of a material selected from the group consisting of gallium and silicon and said infrared ray detecting element is formed of a layer of cadmium telluride and of a material selected from the group consisting of mercury cadmium telluride and lead tin telluride, said material is formed on said layer of cadmium telluride which in turn is formed on said second area of said semiconductor layer. 2. The monolithic infrared ray charge transfer element as claimed in claim 1, wherein said semiconductor substrate is formed of gallium arsenide, said semiconductor layer is formed of gallium arsenide of a first conductivity type, and wherein said infrared ray detecting element comprises a first layer formed on said semiconductor layer, said first layer being formed of cadmium telluride of said first conductivity type, a second layer formed on said first layer, said second layer being formed of mercury cadmium telluride of said first conductivity type, and a third layer formed on said second layer, said third layer being formed of mercury cadmium telluride of a second conductivity type. 3. The monolithic infrared ray charge transfer element as claimed in claim 1, wherein said semiconductor substrate is formed of gallium arsenide and said semiconductor layer is formed of gallium arsenide of a first conductivity type, and wherein said infrared ray detecting element comprises a first layer formed on said semiconductor layer, said first layer being formed of indium antimonide of said first conductivity type, a second layer formed on said first layer, said second layer being formed of mercury cadmium telluride of said first conductivity type, and a third layer formed on said second layer, said third layer being formed of mercury cadmium telluride of a second conductivity type. 4. The monolithic infrared ray charge transfer element as claimed in claim 1, wherein said semiconductor substrate is formed of gallium arsenide and said semiconductor layer is formed of gallium arsenide of a first conductivity type, and wherein said infrared ray detecting element comprises a first layer formed on said semiconductor layer, said first layer being formed of mercury cadmium telluride of said first conductivity type, and a second layer formed on said first layer, said second layer being formed of mercury cadmium telluride of a second conductivity type. 5. The monolithic infrared ray charge transfer element as claimed in claim 1, further comprising a barrier region for preventing charge transfer formed in said semiconductor layer, said infrared ray detecting element being surrounded by said barrier region, said barrier region being adjacent to a surface of said semiconductor layer and of opposite conductivity type compared with said semiconductor layer. 6. The monolithic infrared ray charge transfer element as claimed in claim 1, wherein said semiconductor layer is formed of a material selected from the group consisting of gallium arsenide and silicon, and said infrared ray detecting element is formed on a material selected from the group consisting of mercury cadmium telluride and lead tin telluride, said material is formed on a layer of indium antimonide which in turn is formed on said second area of said semiconductor layer.
이 특허에 인용된 특허 (5)
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Liu Yet-Zen (Westlake Village CA), Backside illuminated imaging charge coupled device.
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Lorenze ; Jr. Robert V. (Westford MA), Durable insulating protective layer for hybrid CCD/mosaic IR detector array.
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Levine Michael A. (383 Sycamore Pl. Sierra Madre CA 91024), Extrinsic infrared detector with a charge reset function.
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King ; Gerard J., Method of making silicon-insulator-polysilicon infrared imaging device with orientially etched detectors.
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Gutierrez William A. (Woodbridge VA) Pollard John H. (Alexandria VA), Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager.
이 특허를 인용한 특허 (6)
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Kasper Erich (Pfaffenhofen DEX) Kohlbacher Gerhard (Ulm DEX) Nothaft Peter (Neu-Ulm/Reutti DEX), Detector having a radiation sensitive surface.
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Cockrum Charles A. ; Bratt Peter R. ; Rhiger David R. ; Wu Owen K., Epitaxial passivation of group II-VI infrared photodetectors.
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Dinan John H. (Alexandria VA), Infrared epitaxial detector structure and method of making same.
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Zanio Ken (El Toro CA) Bean Ross C. (Santa Ana CA), Manufacture of monolithic infrared focal plane arrays.
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Ahlgren William L. (Goleta CA) Schulte Eric F. (Santa Barbara CA), Method and apparatus for detecting infrared radiation.
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Ohshima Toshio (Atsugi JPX) Yokoyama Naoki (Atsugi JPX), Method for producing a semiconductor integrated circuit having an improved isolation structure.
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