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A silicon carbide sintered body comprising silicon carbide as principal constituent, a first component for providing electrical insulating properties to said silicon carbide, said first component comprising at least one of metallic beryllium, beryllium compounds, boron and boron compounds and contai

A silicon carbide sintered body comprising silicon carbide as principal constituent, a first component for providing electrical insulating properties to said silicon carbide, said first component comprising at least one of metallic beryllium, beryllium compounds, boron and boron compounds and contained in a total amount of 0.01 to 3.5% by weight calculated as metal, and a second component which can further promote said silicon carbide sinterability provided by said first component and which does not diffuse easily in the particles of said silicon carbide, said second component comprising at least one substance selected from the Group I elements exclusive of hydrogen and francium, Group II elements exclusive of beryllium, radium and mercury, Group III elements exclusive of boron and aluminum, Group IV elements exclusive of carbon, Group V elements, Group VIa elements, Group VIIa elements Group VIII elements exclusive of iron, and compounds thereof, and contained in a total amount of 0.01 to 10% by weight, with the remainder substantially comprising silicon carbide. This silicon carbide sintered body has an electrical resistivity of 10 7 Ω.cm or above at room temperature and is also excellent in electrical insulating properties and can be advantageously used as substrates for semiconductor devices, etc.

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1. An electrically insulating silicon carbide sintered body having an electrical resistivity of 10 7 Ω.cm or above at room temperature, comprising silicon carbide as a principal component, a first component for providing an electrical insulating quality to said silicon carbide, and first component c

1. An electrically insulating silicon carbide sintered body having an electrical resistivity of 10 7 Ω.cm or above at room temperature, comprising silicon carbide as a principal component, a first component for providing an electrical insulating quality to said silicon carbide, and first component consisting essentially of at least one of metallic beryllium, beryllium compounds, boron and a boron compounds and being contained in said body in a total amount of 0.01 to 3.5% by weight calculated, respectively, as beryllium or boron and a second component which can further promote the sinterability provided to said silicon carbide by said first component and which does not diffuse easily into particles of said silicon carbide, the second component consisting essentially of at least one member selected from the group consisting of the elements in Groups I, II, III, IV, V, VIa, VIIa or VIII of the Periodic Table, other than hydrogen, francium, beryllium, radium, mercury, boron, aluminum, carbon, and iron, and compounds of said elements, said second component being contained in said body in a total amount of 0.01 to 10% by weight with the balance of said body consisting essentially of said silicon carbide. 2. An electrically insulating silicon carbide sintered body according to claim 1, wherein said second component comprises at least one member selected from the group consisting of sodium, sodium compounds, potassium, potassium compounds, rubidium, rubidium compounds, cesium, cesium compounds, magnesium, magnesium compounds, calcium, calcium compounds, strontium, strontium compounds, barium, barium compounds, radium, radium compounds, scandium, scandium compounds, yttrium, yttrium compounds, lanthanum, lanthanum compounds, cerium, cerium compounds, praseodymium, praseodymium compounds, neodium, neodium compounds, samarium, samarium compounds, gadolinium, gadolinium compounds, dysprosium, dysprosium compounds, ytterbium, ytterbium compounds, lutetium, lutetium compounds, actinium, actinium compounds, thorium, thorium compounds, titanium, titanium compounds, zirconium, zirconium compounds, hafnium, hafnium compounds, chromium, chromium compounds, molybdenum, molybdenum compounds, tungsten, tungsten compounds, manganese, manganese compounds, technetium, technetium compounds, rhenium, rhenium compounds, neptunium, neptunium compounds, ruthenium, ruthenium compounds, osmium, osmium compounds, rhodium, rhodium compounds, iridium, iridium compounds, americium, americium compounds, palladium, palladium compounds, platinum, platinum compounds, cobalt, cobalt compounds, nickel, nickel compounds, copper, copper compounds, silver, silver compounds, gold, gold compounds, zinc, zinc compounds, cadmium, cadmium compounds, gallium, gallium compounds, indium, indium compounds, thallium, thallium compounds, germanium, germanium compounds, tin, tin compounds, lead and lead compounds. 3. An electrically insulating silicon carbide sintered body according to claim 2, wherein said compounds are oxides. 4. An electrically insulating silicon carbide sintered body according to claim 1, wherein the content of said silicon carbide is 90% by weight or more of the sintered body. 5. An electrically insulating silicon carbide sintered body according to claim 1, wherein said sintered body has a density which is 90% or more of theoretical. 6. An electrically insulating silicon carbide sintered body according to claim 1, wherein said beryllium compound is beryllium oxide and said boron compound is boron nitrate. 7. An electrical device comprising a circuit element mounted on an electrically insulating substrate, made of an electrically insulating silicon carbide sintered body having an electrical resistivity of 10 7 Ω.cm or above at room temperature, comprising silicon carbide as a principle component, a first component for providing an electrical insulating quality to said silicon carbide, and first component consisting essentially of at least one of metallic beryllium, beryllium compounds, boron and a boron compounds and being contained in said body in a total amount of 0.01 to 3.5% by weight calculated, respectively, as beryllium or boron and a second component which can further promote the sinterability provided to said silicon carbide by said first component and which does not diffuse easily into particles of said silicon carbide, the second component consisting essentially of at least one member selected from the group consisting of the elements in Groups I, II, III, IV, V, VIa, VIIa or VIII of the Periodic Table, other than hydrogen, francium, beryllium, radium, mercury, boron, aluminum, carbon, and iron, and compounds of said elements, said second component being contained in said body in a total amount of 0.01 to 10% by weight with the balance of said body consisting essentially of said silicon carbide. 8. An electrical device according to claim 7, wherein said circuit element comprises at least one of semiconductor element, thick-film resistor and circuit conductor. 9. An electrical device according to claim 7, wherein said substrate is disposed on a radiation fin made of a metal. 10. An electrical device according to claim 8, wherein said semiconductor element is mounted on a heat sink made of a metal and said heat sink is mounted on said substrate. 11. An electrical device according to claim 7, wherein said circuit element is shut off from the atmospheric air by a sealing member. 12. An electrical device according to claim 11, wherein said sealing member is a cap made of a ceramic material. 13. A semiconductor device comprising a semiconductor element mounted on an electrically insulating substrate, said semiconductor element being connected to lead frames by ultra-fine metal wire, said semiconductor element, said ultra-fine wire and part of said lead frames being sealed by a ceramic cap, wherein said substrate is formed of an electrically insulating silicon carbide sintered body having an electrical resistivity of 10 7 Ω.cm or above at room temperature, comprising silicon carbide as a principal component, a first component for providing an electrical insulating quality to said silicon carbide, and first component consisting essentially of at least one of metallic beryllium, beryllium compounds, boron and a boron compounds and being contained in said body in a total amount of 0.01 to 3.5% by weight calculated, respectively, as beryllium or boron and a second component which can further promote the sinterability provided to said silicon carbide by said first component and which does not diffuse easily into particles of said silicon carbide, the second component consisting essentially of at least one member selected from the group consisting of the elements in Groups I, II, III, IV, V, VIa, VIIa or VIII of the Periodic Table, other than hydrogen, francium, beryllium, radium, mercury, boron, aluminum, carbon, and iron, and compounds of said elements, said second component being contained in said body in a total amount of 0.01 to 10% by weight with the balance of said body consisting essentially of said silicon carbide the electrically insulating semiconductor carbide sintered body of claim 1. 14. An semiconductor device according to claim 13, wherein said substrate is disposed on a radiation fin made of a metal.