초록 ▼

A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5×105 cm2/V-sec at 77°K. and a carrier concentration less than 4×1015 (cm-3) is described. The method includes the steps of directing a plurality of vapor flows towards

A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5×105 cm2/V-sec at 77°K. and a carrier concentration less than 4×1015 (cm-3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3.0×10-4 to 4.5×10-4, a Group VI metalorganic vapor having a mole fraction in the range of 2.9×10-3 to 3.5×10-3 and a Group II elemental metal vapor having a mole fraction in the range of 2.6×10-2 to 3.2×10-2. The source of Group II metal is heated to at least 240°C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240°C. The directed flows of Group II metalorganic vapor, Group VI metalorganic vapor and Group II metal vapor then chemically react to form the epitaxial layer.

대표청구항 ▼

A method for growing in a reactor vessel a Group II-VI epitaxial layer over a crystalline substrate comprising the steps of: placing the substrate on a susceptor which is heated to a first predetermined temperature by directing r.f. energy through the susceptor; directing a flow of a Group II metalo

A method for growing in a reactor vessel a Group II-VI epitaxial layer over a crystalline substrate comprising the steps of: placing the substrate on a susceptor which is heated to a first predetermined temperature by directing r.f. energy through the susceptor; directing a flow of a Group II metalorganic into the reactor vessel toward the substrate; directing a flow of a Group VI metalorganic into the reactor vessel toward said substrate; directing a flow of a carrier gas over a Group II metal provided in a separately heated reservoir disposed outside of the reactor vessel to provide a composite flow of the carrier gas and Group II metal; directing the composite flow of the carrier gas and Group II metal into the reactor vessel toward the substrate; directing radiation towards the reactor vessel to warm the source of Group II metal and the zone of the reactor vessel between the Group II metal source and the substrate; and chemically reacting the directed flows of Group II metalorganic, Group VI metalorganic and Group II metal to form the epitaxial layer over the substrate.