초록 ▼

Disclosed is a blocked-impurity-band detector, including an active layer which is doped with a sufficient amount of either a donor or an acceptor impurity that significant charge transport can occur in an impurity band in addition to the charge transport of electrons in the conduction band of the la

Disclosed is a blocked-impurity-band detector, including an active layer which is doped with a sufficient amount of either a donor or an acceptor impurity that significant charge transport can occur in an impurity band in addition to the charge transport of electrons in the conduction band of the layer and of holes in the valence band of the layer. A blocking layer is disposed on the active layer and contains a sufficiently low concentration of impurities that significant charge transport cannot occur in the blocking layer except by means of electrons in the conduction band of the layer or holes in the valence band of the layer. First and second electrodes are provided for applying a bias potential across the active and blocking layers.

대표청구항 ▼

A blocked-impurity-band detector, comprising: an active layer doped with a sufficient amount of an impurity that charge transport can occur in an impurity band in addition to the charge transport of electrons in the conduction band of said layer or holes in the valence band of said layer; an impurit

A blocked-impurity-band detector, comprising: an active layer doped with a sufficient amount of an impurity that charge transport can occur in an impurity band in addition to the charge transport of electrons in the conduction band of said layer or holes in the valence band of said layer; an impurity band blocking layer disposed on said active layer and containing a sufficiently low concentration of impurities that significant charge transport cannot occur in said layer except by means of electrons in the conduction band of said layer or holes in the valence band of said layer; and first and second electrodes for applying a bias potential across said layers.