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A process for forming on a substructure a plural layer, conductor interconnect pattern consisting of a plurality of successively formed, substantially planar, composite layers of insulating material and conductive material with said insulating material on each layer defining a pattern of regions fil

A process for forming on a substructure a plural layer, conductor interconnect pattern consisting of a plurality of successively formed, substantially planar, composite layers of insulating material and conductive material with said insulating material on each layer defining a pattern of regions filled with conductive material to serve as part of a vertical and horizontal interconnect system. The process includes the following steps for forming each composite layer: (a) forming a pattern of regions of conductive material on the substructure; (b) forming over the pattern of conductive regions a layer of insulating material to a thickness substantially greater than the thickness of the conductive material and having a substantially planar top surface; and (c) removing top surface portions of the layer of insulating material down to the top surface of the regions of conductive material. The step of forming the layer of insulating material includes dispensing onto the wafer a volume of a liquid form of the insulating material to fill gaps between the regions of conductive material and to build up a layer of the insulating material having a substantially planar top surface.

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A process for forming an integrated circuit on a substructure having a substantially varying surface topology with surface hills and valleys including the step of forming a plural layer, conductor interconnect pattern and including the step of forming a plurality of successive, substantially planar,

A process for forming an integrated circuit on a substructure having a substantially varying surface topology with surface hills and valleys including the step of forming a plural layer, conductor interconnect pattern and including the step of forming a plurality of successive, substantially planar, composite layers of insulating material and conductive material in said valleys with said insulating material on each layer defining a pattern of regions filled with conductive material to serve as part of a vertical and horizontal interconnect system, the steps for forming each composite layer comprising: (a) forming a pattern of regions of conductive material on said substructure, said regions of conductive material having an upper surface; (b) forming over said pattern of conductive regions a layer of first insulating material to a thickness substantially greater than the thickness of said conductive material and having a substantially planar top surface; and (c) etching back said top surface of said layer of first insulating material down to the top surface of said regions of conductive material. The process of claim 1, wherein said step of forming said pattern of regions of conductive material comprises forming a continuous layer of conductive material on said substrate and patterning said layer of conductive material using photolithography and selective etching steps.