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Dry-etching process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
  • B44C-001/22
  • C03C-015/00
  • C23F-001/00
출원번호 US-0657524 (1984-10-04)
우선권정보 JP-0184399 (1983-10-04)
발명자 / 주소
  • Senoue Makoto (Funabashi JPX) Terase Kunihiko (Tokyo JPX) Iida Shinya (Hamura JPX) Komatsu Hideo (Hamura JPX)
출원인 / 주소
  • Asahi Glass Company Ltd. (Tokyo JPX 03) Kokusai Electric Co., Ltd. (Tokyo JPX 03)
인용정보 피인용 횟수 : 36  인용 특허 : 3

초록

A dry-etching process comprising dry-etching treatment of semiconductor material by action of a gas and, if necessary, cleaning treatment, characterized in that at least one of the dry-etching and cleaning treatments is conducted under action of a gas composed essentially of a fluorinated ether.

대표청구항

A dry-etching process comprising a dry-etching treatment of a semiconductor material by action of a gas, characterized in that the dry-etching treatment is conducted under action of a gas composed essentially of a fluorinated ether.

이 특허에 인용된 특허 (3)

  1. Dension Dean R. (Los Gatos CA) Hartsough Larry D. (Berkeley CA), Laser induced dissociative chemical gas phase processing of workpieces.
  2. Iida Shinya (Tama JPX) Ueki Kazuyoshi (Ohme JPX) Mizutani Tatsumi (Kokubunji JPX) Komatsu Hideo (Hinodemachi JPX) Hirobe Kado (Koganei JPX), Method for preventing corrosion of Al and Al alloys.
  3. Vossen ; Jr. John L. (Bridgewater NJ) Halon Bernard (Brooklyn NY), Plasma etching of aluminum.

이 특허를 인용한 특허 (36)

  1. Dyer Timothy Scott, Apparatus and method for removing silicon dioxide residues from CVD reactors.
  2. Nimitz Jonathan S., Blend compositions of trifluoroiodomethane, tetrafluoroethane and difluoroethane.
  3. Eric K. Grieger ; Michael T. Andreas ; Michael A. Walker, Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication.
  4. Grieger Eric K. ; Andreas Michael T. ; Walker Michael A., Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication.
  5. Grieger Eric K. ; Andreas Michael T. ; Walker Michael A., Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication.
  6. LaPlaca Joseph P. (Merrimack NH), Cleaning method for keyboard assemblies.
  7. Ji Ding ; Hidehiro Kojiri JP; Yoshio Ishikawa JP; Keiji Horioka JP; Ruiping Wang ; Robert W. Wu ; Hoiman Hung, Dielectric etch process reducing striations and maintaining critical dimensions.
  8. Sekiya, Akira; Takagaki, Tetsuya; Morikawa, Shinsuke; Yamashita, Shunichi; Takaichi, Tsuyoshi; Hibino, Yasuo; Furutaka, Yasuhisa; Iwasaki, Masami; Ohtsuka, Norifumi, Dry etching gas.
  9. Ueda, Yasuhiko, Dry etching method and method of manufacturing semiconductor device.
  10. Nimitz Jonathan S. (Albuquerque NM) Lankford Lance H. (Newcastle CA), Fluoroiodocarbon blends as CFC and halon replacements.
  11. Nimitz Jonathan Shelley (Albuquerque NM) Lankford Lance Harrell (Newcastle CA), Fluoroiodocarbon blends as CFC and halon replacements.
  12. Nimitz Jonathan Shelley ; Lankford Lance Harrell, Fluoroiodocarbon blends as CFC and halon replacements.
  13. Ni Tuqiang ; Demos Alex, Gas injection system for plasma processing.
  14. Roy, Sudipto Ranendra; Xu, Yi; Chooi, Simon; Aliyu, Yakub; Zhou, Mei Sheng; Sudijono, John Leonard; Ho, Paul Kwok Keung; Gupta, Subhash, Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence.
  15. Becker David S. ; Blalock Guy T. ; Breiner Lyle D., Method for enhancing oxide to nitride selectivity through the use of independent heat control.
  16. Becker David S. ; Blalock Guy T. ; Roe Fred L., Method for enhancing oxide to nitride selectivity through the use of independent heat control.
  17. Becker,David S.; Blalock,Guy T.; Roe,Fred L., Method for enhancing silicon dioxide to silicon nitride selectivity.
  18. Chandrachood, Madhavi; Kumar, Ajay; Yau, Wai-Fan, Method for etching a molybdenum layer suitable for photomask fabrication.
  19. Barber Jeffrey R. (Pittsburgh PA) Breiten Charles P. (Manassass VA) Stanasolovich David (Manassas VA) Theisen Jacob F. (Manassas VA), Method for making borderless contacts.
  20. Kim Jae-Jeong,KRX, Method for removing etch residue material.
  21. Niino Hiroaki (Nagahama JPX), Method for washing deposition film-forming device.
  22. Becker David S. ; Blalock Guy T. ; Roe Fred L., Method of etching a substrate.
  23. Sang-sup Jeong KR; Tae-hyuk Ahn KR, Method of etching insulating layer in semiconductor device.
  24. Cho,Il Joo; Park,Eun Chul; Hong,Songcheol; Yoon,Euisik, Method of fabricating probe for scanning probe microscope.
  25. Suhr Harald (Tbingen DEX) Feurer Ernst (Tbingen DEX) Oehr Christian (Reusten DEX), Method of producing metallic structures on inorganic non-conductors.
  26. Yen Ming-Shuo,TWX ; Chen Horng-Wen,TWX ; Chen Pei Hung,TWX, Method to reduce contact resistance by means of in-situ ICP.
  27. Cheng Jerry ; Wang Fei, Nitride etch using N.sub.2 /Ar/CHF.sub.3 chemistry.
  28. Ohkuni Mitsuhiro,JPX ; Kugo Shunsuke,JPX ; Sasaki Tomoyuki,JPX ; Tateiwa Kenji,JPX ; Nikoh Hideo,JPX, Pattern formation method.
  29. Misra Ashutosh, Plasma cleaning and etching methods using non-global-warming compounds.
  30. Jianmin Qiao ; Sanjay Thekdi ; Manuj Rathor ; James E. Nulty, Plasma etch chemistry and method of improving etch control.
  31. Koshiishi Akira,JPX, Plasma etching method.
  32. Alwan, James J.; Carpenter, Craig M., Polishing slurry and method for chemical-mechanical polishing.
  33. Ding, Ji; Kojiri, Hidehiro; Ishikawa, Yoshio; Horioka, Keiji; Wang, Ruiping; Wu, Robert W.; Hung, Hoiman (Raymond), Precision dielectric etch using hexafluorobutadiene.
  34. Chan-Lon Yang ; Dan Arnzen ; Jim Nulty, Selective SAC etch process.
  35. Jucha Rhett B. (Celeste TX) Carter Duane E. (Plano TX) Davis Cecil J. (Greenville TX) Crank Sue E. (Coppell TX), Selective etching of tungsten by remote and in situ plasma generation.
  36. Maekawa, Hisayuki, Semiconductor device and a method of manufacturing thereof.
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