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Driver circuits for emitter switch gate turn-off SCR devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H03K-017/72
출원번호 US-0551629 (1983-11-14)
발명자 / 주소
  • Steigerwald Robert L. (Scotia NY)
출원인 / 주소
  • General Electric Company (Schenectady NY 02)
인용정보 피인용 횟수 : 44  인용 특허 : 1

초록 ▼

A bipolar emitter switching transistor in an emitter switched gate turn-off thyristor (GTO) arrangement has a controllable switching device coupled between the base of the emitter switching transistor and the anode of the GTO so that base current needed for the bipolar emitter switching transistor,

대표청구항 ▼

A driver circuit for a transistor driven power switch including a gate turn-off thyristor (GTO) in series with a bipolar emitter switching transistor, said driver circuit comprising: controllable switch means coupled between the base of the emitter switching transistor and the anode of the GTO, for

이 특허에 인용된 특허 (1)

  1. Courier de Mere Henri (Paris FR), Bistable element and a switch circuit comprising such a bistable element.
    상세보기

이 특허를 인용한 특허 (44)

  1. Koehler, Ingo, Circuit configuration and method for limiting current intensity and/or edge slope of electrical signals.
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  2. Duryea, Timothy P., Clamp for controlling current discharge.
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  3. Yuxin Li ; Alex Q. Huang ; Kevin Motto, Diode-assisted gate turn-off thyristor.
    상세보기
  4. Athalye, Praneet; Hu, Qingcong; Walters, Michael; Menzel, Eric; Harris, Michael James, Driving circuits for solid-state lighting apparatus with high voltage LED components and related methods.
    상세보기
  5. Walters, Michael; Hu, Qingcong, Dual mode power supply controller with charge balance multipliers and charge balance multiplier circuits.
    상세보기
  6. Walters, Michael; Hu, Qingcong, Dual mode power supply controller with charge balance multipliers and charge balance multiplier circuits.
    상세보기
  7. Walters, Michael; Hu, Qingcong, Dual mode power supply controller with current regulation.
    상세보기
  8. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Edge termination structure employing recesses for edge termination elements.
    상세보기
  9. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
    상세보기
  10. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
    상세보기
  11. Zhang, Qingchun, High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability.
    상세보기
  12. Das, Mrinal K.; Lin, Henry; Schupbach, Marcelo; Palmour, John Williams, High current, low switching loss SiC power module.
    상세보기
  13. Das, Mrinal K.; Lin, Henry; Schupbach, Marcelo; Palmour, John Williams, High current, low switching loss SiC power module.
    상세보기
  14. Das, Mrinal K.; Callanan, Robert J.; Lin, Henry; Palmour, John Williams, High performance power module.
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  15. Zhang, Qingchun; Ryu, Sei-Hyung; Jonas, Charlotte; Agarwal, Anant K., High power insulated gate bipolar transistors.
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  16. Zhang, Qingchun; Ryu, Sei-Hyung; Jonas, Charlotte; Agarwal, Anant K., High power insulated gate bipolar transistors.
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  17. Ryu, Sei-Hyung; Zhang, Qingchun, High voltage insulated gate bipolar transistors with minority carrier diverter.
    상세보기
  18. Zhang, Qingchun, Insulated gate bipolar transistors including current suppressing layers.
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  19. Zhang, Qingchun, Insulated gate bipolar transistors including current suppressing layers.
    상세보기
  20. Zhang, Qingchun; Ryu, Sei-Hyung, Junction Barrier Schottky diodes with current surge capability.
    상세보기
  21. Conzelmann Gerhard (Leinfelden-Echterdingen DEX) Nagel Karl (Gomaringen DEX), Monolithically integrated, polarity-reversal protected circuit.
    상세보기
  22. Itoh Naoki,JPX ; Nakayama Manabu,JPX, Output circuit with output voltage controlled by current flow through an output transistor circuit.
    상세보기
  23. Chan, Chun-Kong; Tsai, Hsi-Yuan, Power conversion system with zero-voltage start-up mechanism, and zero-voltage start-up device.
    상세보기
  24. Walters, Michael; Ni, Liqin, Power converter with bias voltage regulation circuit.
    상세보기
  25. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Power module for supporting high current densities.
    상세보기
  26. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Power module having a switch module for supporting high current densities.
    상세보기
  27. Zhang, Qingchun; Richmond, James Theodore; Agarwal, Anant K.; Ryu, Sei-Hyung, Power switching devices having controllable surge current capabilities.
    상세보기
  28. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Schottky diode.
    상세보기
  29. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Schottky diode.
    상세보기
  30. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Schottky diode.
    상세보기
  31. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Schottky diode employing recesses for elements of junction barrier array.
    상세보기
  32. Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant, Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same.
    상세보기
  33. Zhang, Qingchun; Henning, Jason, Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same.
    상세보기
  34. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
    상세보기
  35. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
    상세보기
  36. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
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  37. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
    상세보기
  38. Nakamura Hiroyuki,JPX, Semiconductor light emitting element driving circuit.
    상세보기
  39. Sugayama Shigeru (Hitachi JPX) Kariya Tadaaki (Ibaraki JPX) Shimura Tatsuo (Hitachi JPX) Tomita Sigeo (Hitachi JPX), Semiconductor switching circuit.
    상세보기
  40. Zhang, Jun; Ni, Liqin, Solid-state lighting apparatus and methods using energy storage with segment control.
    상세보기
  41. Callanan, Robert J.; Ryu, Sei-Hyung; Zhang, Qingchun, Solid-state pinch off thyristor circuits.
    상세보기
  42. Howell Edward K. (Simsbury CT), Thyristor commutation circuit.
    상세보기
  43. Zhang, Qingchun, Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices.
    상세보기
  44. Zhang, Qingchun; Richmond, James Theodore; Callanan, Robert J., Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits.
    상세보기

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